Impact of spin transfer torque on the write error rate of a voltage-torque-based magnetoresistive random access memory

Abstract

Impact of spin transfer torque (STT) on the write error rate of a voltage-torque-based magnetoresistive random access memory is theoretically analyzed by using the macrospin model. During the voltage pulse the STT assists or suppresses the precessional motion of the magnetization depending on the initial magnetization direction. The characteristic value of the current density is derived by balancing the STT and the external-field torque, which is about 5$\times$ 10${}^{11}$ A/m${}^2$. The results show that the write error rate is insensitive to the STT below the current density of $10^{10}$ A/m${}^2$.

8 pages, 5 figures, submitted to Physical Review Applied

References in corpus (3)

• Surface Magnetoelectric Effect in Ferromagnetic Metal Films
• Recent progress in voltage control of magnetism: Materials, mechanisms, and performance
• Voltage-induced precessional switching at zero-bias magnetic field in a conically magnetized free layer