195 citations · 430 across the 19 of their papers we have counts for
20 papers
1/f noise of a tiny tunnel magnetoresistance sensor originated from a wide distribution of bath correlation time
Hiroshi Imamura, Hiroko Arai, Rie Matsumoto +1
Tunnel magnetoresistance (TMR) sensor is a highly sensitive magnetic field sensor and is expected to be applied in various fields, such as magnetic recording, industrial sensing, a…
Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field
Rie Matsumoto, Shiniji Yuasa, Hiroshi Imamura
Voltage-controlled magnetoresistive random access memory (VC-MRAM) based on voltage-induced dynamic switching in magnetic tunnel junctions (MTJs) is a promising ultimate non-volati…
Heavily Damped Precessional Switching with Very Low Write-error Rate in Elliptical-cylinder Magnetic Tunnel Junction
Rie Matsumoto, Shinji Yuasa, Hiroshi Imamura
Voltage-induced dynamic switching in magnetic tunnel junctions (MTJs) is a writing technique for voltage-controlled magnetoresistive random access memory (VCMRAM), which is expecte…
Distribution of write error rate of spin-transfer-torque magnetoreistive random access memory caused by a distribution of junction parameters
Hiroshi Imamura, Hiroko Arai, Rie Matsumoto
Distribution of write error rate (WER) of spin-transfer-torque magnetoreistive random access memory (STT MRAM) caused by a distribution of resistance area product and anisotropy co…
Precession dynamics of a small magnet with non-Markovian damping: Theoretical proposal for an experiment to determine the correlation time
Hiroshi Imamura, Hiroko Arai, Rie Matsumoto +2
Recent advances in experimental techniques have made it possible to manipulate and measure the magnetization dynamics on the femtosecond time scale which is the same order as the c…
Large angle precession of magnetization maintained by a microwave voltage
Hiroshi Imamura, Rie Matsumoto
Effects of a microwave voltage on magnetization precession are analyzed based on a macrospin model. The microwave voltage induces the oscillating anisotropy field through the volta…
Low power switching of magnetization using enhanced magnetic anisotropy with short-voltage-pulse application
Rie Matsumoto, Hiroshi Imamura
A low power magnetization switching scheme based on the voltage control of magnetic anisotropy (VCMA) is proposed. In contrast to the conventional switching scheme using VCMA, wher…
Impact of spin transfer torque on the write error rate of a voltage-torque-based magnetoresistive random access memory
Hiroshi Imamura, Rie Matsumoto
Impact of spin transfer torque (STT) on the write error rate of a voltage-torque-based magnetoresistive random access memory is theoretically analyzed by using the macrospin model.…
Chaos and relaxation oscillations in spin-torque windmill neurons
Rie Matsumoto, Steven Lequeux, Hiroshi Imamura +1
Spintronic neurons which emit sharp voltage spikes are required for the realization of hardware neural networks enabling fast data processing with low-power consumption. In many ne…
Voltage-induced precessional switching at zero-bias magnetic field in a conically magnetized free layer
R. Matsumoto, T. Nozaki, S. Yuasa +1
Voltage-induced magnetization dynamics in a conically magnetized free layer with an elliptic cylinder shape is theoretically studied on the basis of the macrospin model. It is foun…
Critical current density of a spin-torque oscillator with an in-plane magnetized free layer and an out-of-plane magnetized polarizer
R. Matsumoto, H. Imamura
Spin-torque induced magnetization dynamics in a spin-torque oscillator with an in-plane (IP) magnetized free layer and an out-of-plane (OP) magnetized polarizer under IP shape-anis…
Inside the perpendicular spin-torque memristor
Steven Lequeux, Joao Sampaio, Vincent Cros +6
Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to th…
Increased magnetic damping of a single domain wall and adjacent magnetic domains detected by spin torque diode in a nanostripe
Steven Lequeux, Joao Sampaio, Paolo Bortolotti +11
We use spin-torque resonance to probe simultaneously and separately the dynamics of a magnetic domain wall and of magnetic domains in a nanostripe magnetic tunnel junction. Thanks…
Noise-enhanced synchronization of stochastic magnetic oscillators
Nicolas Locatelli, Alice Mizrahi, Artur Accioloy +9
We present an experimental study of phase-locking in a stochastic magnetic oscillator. The system comprises a magnetic tunnel junction with a superparamagnetic free layer, whose ma…
Time-resolved observation of fast domain-walls driven by vertical spin currents in short tracks
Joao Sampaio, Steven Lequeux, Peter J. Metaxas +12
We present time-resolved measurements of the displacement of magnetic domain-walls (DWs) driven by vertical spin-polarized currents in track-shaped magnetic tunnel junctions. In th…
Parallel pumping of magnetic vortex gyrations in spin-torque nano-oscillators
P. Bortolotti, C. Serpico, E. Grimaldi +8
We experimentally demonstrate that large magnetic vortex oscillations can be parametrically excited in a magnetic tunnel junction by the injection of radio-frequency (rf) currents…
Magnetic domain wall motion by spin transfer
Julie Grollier, Andre Chanthbouala, Rie Matsumoto +4
The discovery that a spin polarized current can exert a large torque on a ferromagnet through a transfusion of spin angular momentum, offers a new way to control a magnetization by…
Spin Transfer Torque with Spin Diffusion in Magnetic Tunnel Junctions
A Manchon, R. Matsumoto, H. Jaffres +1
Spin transport in magnetic tunnel junctions in the presence of spin diffusion is considered theoretically. Combining ballistic tunneling across the barrier and diffusive transport…
Spin-Torque Diode Measurements of MgO-Based Magnetic Tunnel Junctions with Asymmetric Electrodes
R. Matsumoto, A. Chanthbouala, J. Grollier +8
We present a detailed study of the spin-torque diode effect in CoFeB/MgO/CoFe/NiFe magnetic tunnel junctions. From the evolution of the resonance frequency with magnetic field at d…
Vertical current induced domain wall motion in MgO-based magnetic tunnel junction with low current densities
A. Chanthbouala, R. Matsumoto, J. Grollier +11
Shifting electrically a magnetic domain wall (DW) by the spin transfer mechanism is one of the future ways foreseen for the switching of spintronic memories or registers. The class…