activity
20162022
most citedVoltage-induced precessional switching at zero-bias magnetic field in a conically magnetized free layer

27 citations · 42 across the 6 of their papers we have counts for

collaborators

9 papers

cond-mat.mes-hall2022

Heavily Damped Precessional Switching with Very Low Write-error Rate in Elliptical-cylinder Magnetic Tunnel Junction

Rie Matsumoto, Shinji Yuasa, Hiroshi Imamura

Voltage-induced dynamic switching in magnetic tunnel junctions (MTJs) is a writing technique for voltage-controlled magnetoresistive random access memory (VCMRAM), which is expecte…

cond-mat.mes-hall20227 cited

Distribution of write error rate of spin-transfer-torque magnetoreistive random access memory caused by a distribution of junction parameters

Hiroshi Imamura, Hiroko Arai, Rie Matsumoto

Distribution of write error rate (WER) of spin-transfer-torque magnetoreistive random access memory (STT MRAM) caused by a distribution of resistance area product and anisotropy co…

cond-mat.mes-hall20223 cited

Precession dynamics of a small magnet with non-Markovian damping: Theoretical proposal for an experiment to determine the correlation time

Hiroshi Imamura, Hiroko Arai, Rie Matsumoto +2

Recent advances in experimental techniques have made it possible to manipulate and measure the magnetization dynamics on the femtosecond time scale which is the same order as the c…

cond-mat.mes-hall20205 cited

Large angle precession of magnetization maintained by a microwave voltage

Hiroshi Imamura, Rie Matsumoto

Effects of a microwave voltage on magnetization precession are analyzed based on a macrospin model. The microwave voltage induces the oscillating anisotropy field through the volta…

cond-mat.mtrl-sci2020

Low power switching of magnetization using enhanced magnetic anisotropy with short-voltage-pulse application

Rie Matsumoto, Hiroshi Imamura

A low power magnetization switching scheme based on the voltage control of magnetic anisotropy (VCMA) is proposed. In contrast to the conventional switching scheme using VCMA, wher…

cond-mat.mes-hall2019

Impact of spin transfer torque on the write error rate of a voltage-torque-based magnetoresistive random access memory

Hiroshi Imamura, Rie Matsumoto

Impact of spin transfer torque (STT) on the write error rate of a voltage-torque-based magnetoresistive random access memory is theoretically analyzed by using the macrospin model.…