Critical current density of a spin-torque oscillator with an in-plane magnetized free layer and an out-of-plane magnetized polarizer

Abstract

Spin-torque induced magnetization dynamics in a spin-torque oscillator with an in-plane (IP) magnetized free layer and an out-of-plane (OP) magnetized polarizer under IP shape-anisotropy field ($H_{\mathrm{k}}$) and applied IP magnetic field ($H_{\mathrm{a}}$) was theoretically studied based on the macrospin model. The rigorous analytical expression of the critical current density ($J_{c1}$) for the OP precession was obtained. The obtained expression successfully reproduces the experimentally obtained $H_{\mathrm{a}}$-dependence of $J_{c1}$ reported in [D. Houssameddine $et$ $al$., Nat. Mater. 6, 447 (2007)].

10 pages, 3 figures

References in corpus (1)

• Bias-driven large power microwave emission from MgO-based tunnel magnetoresistance devices

Cited by in corpus (2)

• Voltage-induced precessional switching at zero-bias magnetic field in a conically magnetized free layer
• Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field