340 citations · 1.9k across the 87 of their papers we have counts for
87 papers
Material Parameters for Faster Ballistic Switching of an In-plane Magnetized Nanomagnet
Toshiki Yamaji, Hiroshi Imamura
High-speed magnetization switching of a nanomagnet is necessary for faster information processing. The ballistic switching by a pulsed magnetic filed is a promising candidate for t…
Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field
Rie Matsumoto, Shiniji Yuasa, Hiroshi Imamura
Voltage-controlled magnetoresistive random access memory (VC-MRAM) based on voltage-induced dynamic switching in magnetic tunnel junctions (MTJs) is a promising ultimate non-volati…
Characteristic time of transition from write error to retention error in voltage-controlled magnetoresistive random-access memory
Hiroko Arai, Hiroshi Imamura
Voltage controlled magnetoresistive random access memory (VC MRAM) is a promising candidate for a future low-power high-density memory. The main causes of bit errors in VC MRAM are…
First-principles study of enhancement of perpendicular magnetic anisotropy obtained by inserting an ultrathin LiF layer at an Fe/MgO interface
Yukie Kitaoka, Hiroshi Imamura
Perpendicular magnetic anisotropy (PMA) is a key property of magnetoresistive random access memory (MRAM). To increase areal density of MRAM it is important to find a way to enhanc…
Heavily Damped Precessional Switching with Very Low Write-error Rate in Elliptical-cylinder Magnetic Tunnel Junction
Rie Matsumoto, Shinji Yuasa, Hiroshi Imamura
Voltage-induced dynamic switching in magnetic tunnel junctions (MTJs) is a writing technique for voltage-controlled magnetoresistive random access memory (VCMRAM), which is expecte…
Distribution of write error rate of spin-transfer-torque magnetoreistive random access memory caused by a distribution of junction parameters
Hiroshi Imamura, Hiroko Arai, Rie Matsumoto
Distribution of write error rate (WER) of spin-transfer-torque magnetoreistive random access memory (STT MRAM) caused by a distribution of resistance area product and anisotropy co…