Deterministic magnetization switching by voltage-control of magnetic anisotropy and Dzyaloshinskii-Moriya interaction under in-plane magnetic field
arXiv:1906.01254 · doi:10.1103/PhysRevApplied.10.054039
Abstract
Based on the micromagnetic simulations the magnetization switching in a triangle magnetic element by voltage-control of magnetic anisotropy and Dzyaloshinskii-Moriya interaction under in-plane magnetic field is proposed. The proposed switching scheme is not the toggle switching but the deterministic switching where the magnetic state is determined by the polarity of the applied voltage pulse. The mechanism and conditions for the switching are clarified. The results provide a fast and low-power writing method for magnetoresistive random access memories.
arXiv comment6 pages, 6 figures
References in corpus (7)
- Skyrmion Lattice in a Chiral Magnet
- The design and verification of Mumax3
- Current-driven dynamics of chiral ferromagnetic domain walls
- Topological Hall effect in the A-phase of MnSi
- Dynamics of Dzyaloshinskii domain walls in ultrathin magnetic films
- Interface control of the magnetic chirality in CoFeB|MgO heterosctructures with heavy metal underlayers
- Asymmetric hysteresis for probing Dzyaloshinskii-Moriya interaction
Cited by in corpus (3)
- Magnetization dynamics modulated by Dzyaloshinskii-Moriya interaction in the double-interface spin transfer torque magnetic tunnel junction
- Chiral-induced switching of antiferromagnet spins in a confined nanowire
- Asymmetric defect distribution generates bulk Dzyaloshinskii-Moriya interaction in Pt/Co/Pt