Electric-Field-Controlled Antiferromagnetic Spintronic Devices

Abstract

In recent years, the field of antiferromagnetic spintronics has been substantially advanced. Electric-field control is a promising approach to achieving ultra-low power spintronic devices via suppressing Joule heating. In this article, cutting-edge research, including electric-field modulation of antiferromagnetic spintronic devices using strain, ionic liquids, dielectric materials, and electrochemical ionic migration, are comprehensively reviewed. Various emergent topics such as the Neel spin-orbit torque, chiral spintronics, topological antiferromagnetic spintronics, anisotropic magnetoresistance, memory devices, two-dimensional magnetism, and magneto-ionic modulation with respect to antiferromagnets are examined. In conclusion, we envision the possibility of realizing high-quality room-temperature antiferromagnetic tunnel junctions, antiferromagnetic spin logic devices, and artificial antiferromagnetic neurons. It is expected that this work provides an appropriate and forward-looking perspective that will promote the rapid development of this field.

arXiv comment47 pages, 21 figures. Review

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• Spin-Orbit Torque Switching of Noncollinear Antiferromagnetic Antiperovskite Manganese Nitride Mn${}_3$GaN
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• Noncollinear Antiferromagnetic Spintronics
• Effective strain manipulation of the antiferromagnetic state of polycrystalline NiO
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• NiSi: New venue for antiferromagnetic spintronics
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• Persistence of large and gate-tunable anisotropic magnetoresistance in an atomically thin antiferromagnet
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