Spin-Orbit Torque Switching of Noncollinear Antiferromagnetic Antiperovskite Manganese Nitride Mn${}_3$GaN

Abstract

Noncollinear antiferromagnets have promising potential to replace ferromagnets in the field of spintronics as high-density devices with ultrafast operation. To take full advantage of noncollinear antiferromagnets in spintronics applications, it is important to achieve efficient manipulation of noncollinear antiferromagnetic spin. Here, using the anomalous Hall effect as an electrical signal of the triangular magnetic configuration, spin-orbit torque switching with no external magnetic field is demonstrated in noncollinear antiferromagnetic antiperovskite manganese nitride Mn${}_3$GaN at room temperature. The pulse-width dependence and subsequent relaxation of Hall signal behavior indicate that the spin-orbit torque plays a more important role than the thermal contribution due to pulse injection. In addition, multistate memristive switching with respect to pulse current density was observed. The findings advance the effective control of noncollinear antiferromagnetic spin, facilitating the use of such materials in antiferromagnetic spintronics and neuromorphic computing applications.

Accepted in Physical Review Applied

References in corpus (6)

• Electrical Manipulation of a Topological Antiferromagnetic State
• Electric-Field-Controlled Antiferromagnetic Spintronic Devices
• Anomalous Hall Conductivity of a Non-Collinear Magnetic Antiperovskite
• Anomalous Hall effect in non-collinear antiferromagnetic antiperovskite Mn${}_3$Ni${}_{1-x}$Cu${}_x$N
• Systematic study of nonmagnetic resistance changes due to electrical pulsing in single metal layers and metal/antiferromagnet bilayers
• Scaling the electrical current switching of exchange bias in fully-epitaxial antiferromagnet/ferromagnet bilayers

Cited by in corpus (7)

• All-electrical switching of a topological non-collinear antiferromagnet at room temperature
• Spin-Polarized Antiferromagnetic Spintronics
• The Rise of Refractory Transition-Metal Nitride Films for Advanced Electronics and Plasmonics
• Noncollinear Antiferromagnetic Spintronics
• Canted Antiferromagnetism in Polar MnSiN${}_2$ with High Néel Temperature
• Optimization of reactively sputtered Mn3GaN films based on resistivity measurements
• Cluster magnetic octupole induced out-of-plane spin polarization in antiperovskite antiferromagnet