Spin-Orbit Torque Switching of Noncollinear Antiferromagnetic Antiperovskite Manganese Nitride Mn${}_3$GaN

Abstract

Noncollinear antiferromagnets have promising potential to replace ferromagnets in the field of spintronics as high-density devices with ultrafast operation. To take full advantage of noncollinear antiferromagnets in spintronics applications, it is important to achieve efficient manipulation of noncollinear antiferromagnetic spin. Here, using the anomalous Hall effect as an electrical signal of the triangular magnetic configuration, spin-orbit torque switching with no external magnetic field is demonstrated in noncollinear antiferromagnetic antiperovskite manganese nitride Mn${}_3$GaN at room temperature. The pulse-width dependence and subsequent relaxation of Hall signal behavior indicate that the spin-orbit torque plays a more important role than the thermal contribution due to pulse injection. In addition, multistate memristive switching with respect to pulse current density was observed. The findings advance the effective control of noncollinear antiferromagnetic spin, facilitating the use of such materials in antiferromagnetic spintronics and neuromorphic computing applications.

arXiv commentAccepted in Physical Review Applied

References in corpus (21)

• Antiferromagnetic spintronics
• Antiferromagnetic spintronics
• Anomalous Hall effect arising from noncollinear antiferromagnetism
• Electrical Manipulation of a Topological Antiferromagnetic State
• Antidamping torque-induced switching in biaxial antiferromagnetic insulators
• Electrical switching of antiferromagnetic Mn${}_2$Au and the role of thermal activation
• Mechanism of Néel order switching in antiferromagnetic thin films revealed by magnetotransport and direct imaging
• Electric-Field-Controlled Antiferromagnetic Spintronic Devices
• Current-polarity dependent manipulation of antiferromagnetic domains
• Anomalous Hall Conductivity of a Non-Collinear Magnetic Antiperovskite
• The anomalous Hall effect in non-collinear antiferromagnetic Mn${}_3$NiN thin films
• Piezomagnetic effect as a counterpart of negative thermal expansion in magnetically frustrated Mn-based antiperovskite nitrides
• Topology analysis for anomalous Hall effect in the non-collinear antiferromagnetic states of Mn${}_{3}A$N ($A$ = Ni, Cu, Zn, Ga, Ge, Pd, In, Sn, Ir, Pt)
• Dynamics of noncollinear antiferromagnetic textures driven by spin current injection
• Electrical current switching of the noncollinear antiferromagnet Mn${}_3$GaN
• Anomalous Hall effect in non-collinear antiferromagnetic antiperovskite Mn${}_3$Ni${}_{1-x}$Cu${}_x$N
• Spin-orbit torque induced electrical switching of antiferromagnetic MnN
• Piezospintronic effect in antiperovskite Mn${}_3$GaN
• Systematic study of nonmagnetic resistance changes due to electrical pulsing in single metal layers and metal/antiferromagnet bilayers
• Epitaxial growth and orientation-dependent anomalous Hall effect of noncollinear antiferromagnetic Mn${}_3$Ni${}_{0.35}$Cu${}_{0.65}$N films
• Scaling the electrical current switching of exchange bias in fully-epitaxial antiferromagnet/ferromagnet bilayers

Cited by in corpus (7)

• All-electrical switching of a topological non-collinear antiferromagnet at room temperature
• Spin-Polarized Antiferromagnetic Spintronics
• The Rise of Refractory Transition-Metal Nitride Films for Advanced Electronics and Plasmonics
• Noncollinear Antiferromagnetic Spintronics
• Canted Antiferromagnetism in Polar MnSiN${}_2$ with High Néel Temperature
• Optimization of reactively sputtered Mn3GaN films based on resistivity measurements
• Cluster magnetic octupole induced out-of-plane spin polarization in antiperovskite antiferromagnet