All-electrical switching of a topological non-collinear antiferromagnet at room temperature

Abstract

Non-collinear antiferromagnetic Weyl semimetals, combining the advantages of a zero stray field and ultrafast spin dynamics as well as a large anomalous Hall effect and the chiral anomaly of Weyl fermions, have attracted extensive interests. However, the all-electrical control of such systems at room temperature, a crucial step toward practical applications, has not been reported. Here using a small writing current of around 5*10^{6} A/cm^{2}, we realize the all-electrical current-induced deterministic switching of the non-collinear antiferromagnet Mn3Sn with a strong readout signal at room temperature in the Si/SiO2/Mn3Sn/AlOx structure, without external magnetic field and injected spin current. Our simulations reveal that the switching is originated from the current-induced intrinsic non-collinear spin-orbit torques in Mn3Sn itself. Our findings pave the way for the development of topological antiferromagnetic spintronics.

References in corpus (28)

• Magnetic switching by spin torque from the spin Hall effect
• Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems
• Electrical switching of an antiferromagnet
• Switching of perpendicular magnetization by spin-orbit torques in the absence of external magnetic fields
• Magnetization switching by spin-orbit torque in an antiferromagnet/ferromagnet bilayer system
• Observation of the nonlinear Hall effect under time reversal symmetric conditions
• Large anomalous Nernst effect at room temperature in a chiral antiferromagnet
• Evidence for Magnetic Weyl Fermions in a Correlated Metal
• Writing and Reading antiferromagnetic Mn${}_2$Au: Néel spin-orbit torques and large anisotropic magnetoresistance
• Electrical Manipulation of a Topological Antiferromagnetic State
• Topological Weyl semimetals in the chiral antiferromagnetic materials Mn3Ge and Mn3Sn
• Nonlinear Hall Effects
• Chiral anomaly as origin of planar Hall effect in Weyl semimetals
• Cluster multipole theory for anomalous Hall effect in antiferromagnets
• Strong, anisotropic anomalous Hall effect and spin Hall effect in chiral antiferromagnetic compounds Mn${}_{3}X$ ($X$ = Ge, Sn, Ga, Ir, Rh and Pt)
• Spin-polarized current in non-collinear antiferromagnets
• Antidamping torque-induced switching in biaxial antiferromagnetic insulators
• Anomalous current-induced spin torques in ferrimagnets near compensation
• Tuning a binary ferromagnet into a multi-state synapse with spin-orbit torque induced plasticity
• Electrical Switching of Tristate Antiferromagnetic Néel Order in $\alpha$-Fe${}_2$O${}_3$ Epitaxial Films
• Anomalous Hall Effect in Thin Film of the Weyl Antiferromagnet Mn${}_3$Sn
• Room-Temperature Terahertz Anomalous Hall Effect in Weyl Antiferromagnet Mn${}_3$Sn Thin Films
• Magnetic Phase Dependence of the Anomalous Hall Effect in Mn${}_3$Sn Single Crystals
• Anomalous and topological Hall effects in epitaxial thin films of the noncollinear antiferromagnet Mn${}_3$Sn
• Spin Logic Devices via Electric Field Controlled Magnetization Reversal by Spin-Orbit Torque
• Field-free spin-orbit torque switching through domain wall motion
• Magnetization switching induced by spin-orbit torque from Co2MnGa magnetic Weyl semimetal thin films
• Spin-Orbit Torque Switching of Noncollinear Antiferromagnetic Antiperovskite Manganese Nitride Mn${}_3$GaN

Cited by in corpus (10)

• Antiferromagnetic Tunnel Junctions for Spintronics
• Kagome metals
• Anomalous-Hall Neel textures in altermagnetic materials
• Intrinsic spin-orbit torque mechanism for deterministic all-electric switching of noncollinear antiferromagnets
• NiSi: New venue for antiferromagnetic spintronics
• Mechanical resonant sensing of spin texture dynamics in a two-dimensional antiferromagnet
• Anomalous magnetoresistance in an antiferromagnetic Kagome semimetal heterostructures
• Approaches to tunnel magnetoresistance effect with antiferromagnets
• Strain-induced manipulation of non-collinear antiferromagnets
• Epitaxial growth and magneto-transport properties of kagome metal FeGe thin films