All-electrical switching of a topological non-collinear antiferromagnet at room temperature

Abstract

Non-collinear antiferromagnetic Weyl semimetals, combining the advantages of a zero stray field and ultrafast spin dynamics as well as a large anomalous Hall effect and the chiral anomaly of Weyl fermions, have attracted extensive interests. However, the all-electrical control of such systems at room temperature, a crucial step toward practical applications, has not been reported. Here using a small writing current of around 5*10^{6} A/cm^{2}, we realize the all-electrical current-induced deterministic switching of the non-collinear antiferromagnet Mn3Sn with a strong readout signal at room temperature in the Si/SiO2/Mn3Sn/AlOx structure, without external magnetic field and injected spin current. Our simulations reveal that the switching is originated from the current-induced intrinsic non-collinear spin-orbit torques in Mn3Sn itself. Our findings pave the way for the development of topological antiferromagnetic spintronics.

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• Topological Weyl semimetals in the chiral antiferromagnetic materials Mn3Ge and Mn3Sn
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Cited by in corpus (10)

• Antiferromagnetic Tunnel Junctions for Spintronics
• Kagome metals
• Anomalous-Hall Neel textures in altermagnetic materials
• Intrinsic spin-orbit torque mechanism for deterministic all-electric switching of noncollinear antiferromagnets
• NiSi: New venue for antiferromagnetic spintronics
• Mechanical resonant sensing of spin texture dynamics in a two-dimensional antiferromagnet
• Anomalous magnetoresistance in an antiferromagnetic Kagome semimetal heterostructures
• Approaches to tunnel magnetoresistance effect with antiferromagnets
• Strain-induced manipulation of non-collinear antiferromagnets
• Epitaxial growth and magneto-transport properties of kagome metal FeGe thin films