activity
20192026
most citedAll-electrical switching of a topological non-collinear antiferromagnet at room temperature

95 citations · 289 across the 12 of their papers we have counts for

collaborators

13 papers

cond-mat.mtrl-sci2026

Orbital Hall Effect Enables Field-Free Magnetization Reversal in Ferrimagnets without Additional Conversion Layer

Zelalem Abebe Bekele, Kun Lei, Xiukai Lan +8

The spin Hall effect provides a well-established route for electrical magnetization control, while the orbital Hall effect offers a powerful yet less explored source of angular mom…

cond-mat.mes-hall2026

Harnessing hidden quantum metric response in a 2D magnet via nonlocal photovoltaic effect

Yong Tan, Qian Hu, Rui-Chun Xiao +11

The quantum geometry of Bloch wavefunctions underpins a wealth of emergent phenomena in quantum materials. Its imaginary part, the Berry curvature, has long been recognized as a ke…

cond-mat.mtrl-sci2026

Epitaxial growth and magneto-transport properties of kagome metal FeGe thin films

Xiaoyue Song, Yanshen Chen, Yongcheng Deng +5

Antiferromagnetic kagome metal FeGe has attracted tremendous attention in condensed matter physics due to the charge density wave (CDW) being well below its magnetic transition tem…

cond-mat.mes-hall2025

Two-dimensional magnetic tunnel p-n junctions for low-power electronics

Wenkai Zhu, Ziao Wang, Tiangui Hu +13

For decades, semiconductors and their heterostructures have underpinned both fundamental and applied research across all areas of electronics. Two-dimensional, 2D (atomically thin)…

cond-mat.mtrl-sci2025★ 3 cited

Anomalous magnetoresistance in an antiferromagnetic Kagome semimetal heterostructures

Xionghua Liu, Qiyuan Feng, Weibin Cui +8

Antiferromagnetic Kagome semimetals have attracted tremendous attentions for their potential application in antiferromagnetic topological spintronics. Effectively manipulating Kago…

cond-mat.mtrl-sci2025

Orbital Hall Effect Enables Field-Free Magnetization Reversal in Ferrimagnets without Additional Conversion Layer

Zelalem Abebe Bekele, Kun Lei, Xiukai Lan +7

The spin Hall effect (SHE) enables efficient electrical manipulation of magnetization through the spin Hall current \left(\mathbit{J}_{\mathbit{SHE}}\right), advancing energy-effic…

physics.app-ph2023★ 3 cited

Room-temperature van der Waals 2D ferromagnet switching by spin-orbit torques

Weihao Li, Wenkai Zhu, Gaojie Zhang +10

Emerging wide varieties of the two-dimensional (2D) van der Waals (vdW) magnets with atomically thin and smooth interfaces holds great promise for next-generation spintronic device…

cond-mat.mtrl-sci2023★ 88 cited

Large and tunable magnetoresistance in van der Waals Ferromagnet/Semiconductor junctions

Wenkai Zhu, Yingmei Zhu, Tong Zhou +11

Magnetic tunnel junctions (MTJs) with conventional bulk ferromagnets separated by a nonmagnetic insulating layer are key building blocks in spintronics for magnetic sensors and mem…

physics.app-ph2022

Tunable Rapid Electron Transport in Titanium Oxide Thin Films

Runze Li, Faguang Yan, Yongcheng Deng +1

Rapid electron transport in the quantum well triggers many novel physical phenomena and becomes a critical point for the high-speed electronics. Here, we found electrical propertie…

physics.app-ph2022

Electrically function switchable magnetic domain-wall memory

Yu Sheng, Weiyang Wang, Yongcheng Deng +3

More-versatile memory is strongly desired for end-users to protect their information in the information era. In particular, bit-level switchable memory, from rewritable to read-onl…

cond-mat.mes-hall2022★ 95 cited

All-electrical switching of a topological non-collinear antiferromagnet at room temperature

Yongcheng Deng, Xionghua Liu, Yiyuan Chen +7

Non-collinear antiferromagnetic Weyl semimetals, combining the advantages of a zero stray field and ultrafast spin dynamics as well as a large anomalous Hall effect and the chiral…

physics.app-ph2020★ 13 cited

All-Linear Multistate Magnetic Switching Induced by Electrical Current

Meiyin Yang, Yanru Li, Jun Luo +10

We present an alternative mechanism to control the domain wall motion, whose directions are manipulated by the amplitude of electrical currents when modulating the ratio of D/A (co…

physics.app-ph2019★ 87 cited

Spin Logic Devices via Electric Field Controlled Magnetization Reversal by Spin-Orbit Torque

Meiyin Yang, Yongcheng Deng, Zhenhua Wu +10

We describe a spin logic device with controllable magnetization switching of perpendicularly magnetized ferromagnet / heavy metal structures on a ferroelectric (1-x)[Pb(Mg1/3Nb2/3)…