All-electrical switching of a topological non-collinear antiferromagnet at room temperature

Abstract

Non-collinear antiferromagnetic Weyl semimetals, combining the advantages of a zero stray field and ultrafast spin dynamics as well as a large anomalous Hall effect and the chiral anomaly of Weyl fermions, have attracted extensive interests. However, the all-electrical control of such systems at room temperature, a crucial step toward practical applications, has not been reported. Here using a small writing current of around 5*10^{6} A/cm^{2}, we realize the all-electrical current-induced deterministic switching of the non-collinear antiferromagnet Mn3Sn with a strong readout signal at room temperature in the Si/SiO2/Mn3Sn/AlOx structure, without external magnetic field and injected spin current. Our simulations reveal that the switching is originated from the current-induced intrinsic non-collinear spin-orbit torques in Mn3Sn itself. Our findings pave the way for the development of topological antiferromagnetic spintronics.

References in corpus (6)

• Writing and Reading antiferromagnetic Mn${}_2$Au: Néel spin-orbit torques and large anisotropic magnetoresistance
• Electrical Manipulation of a Topological Antiferromagnetic State
• Topological Weyl semimetals in the chiral antiferromagnetic materials Mn3Ge and Mn3Sn
• Cluster multipole theory for anomalous Hall effect in antiferromagnets
• Magnetization switching induced by spin-orbit torque from Co2MnGa magnetic Weyl semimetal thin films
• Spin-Orbit Torque Switching of Noncollinear Antiferromagnetic Antiperovskite Manganese Nitride Mn${}_3$GaN

Cited by in corpus (1)

• NiSi: New venue for antiferromagnetic spintronics