Antiferromagnetic Tunnel Junctions for Spintronics

Abstract

Antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronics, where an AFM Néel vector is used as a state variable. Efficient electric control and detection of the Néel vector are critical for spintronic applications. This review article features fundamental properties of AFM tunnel junctions (AFMTJs) as spintronic devices where such electric control and detection can be realized. We emphasize critical requirements for observing a large tunneling magnetoresistance (TMR) effect in AFMTJs with collinear and noncollinear AFM electrodes, such as a momentum-dependent spin polarization and Néel spin currents. We further discuss spin torques in AFMTJs that are capable of Néel vector switching. Overall, AFMTJs have potential to become a new standard for spintronics providing larger magnetoresistive effects, few orders of magnitude faster switching speed, and much higher packing density than conventional magnetic tunnel junctions (MTJs).

An invited review for recent progress of antiferromagnetic tunnel junctions

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Cited by in corpus (16)

• Antiferroelectric Altermagnets: Antiferroelectricity Alters Magnets
• Spin-Polarized Antiferromagnetic Spintronics
• Anisotropic spin filtering by an altermagnetic barrier in magnetic tunnel junctions
• Spin-Splitting Magnetoresistance in Altermagnetic RuO2 Thin Films
• Emergent Multiferroic Altermagnets and Spin Control via Noncollinear Molecular Polarization
• Quasi-one-dimensional spin transport in altermagnetic $Z^3$ nodal net metals
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• First-principles study on tunnel magnetoresistance effect with Cr-doped RuO${}_2$ electrode
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• Symmetry-controlled SrRuO3/SrTiO3/SrRuO3 magnetic tunnel junctions:Spin polarization and its relevance to tunneling magnetoresistance
• Zeeman-type spin splittings in strained d-wave altermagnets
• Approaches to tunnel magnetoresistance effect with antiferromagnets
• Tailoring Corner States and Exceptional Points in Altermagnets
• Ab initio study of magnetoresistance effect in $\mathrm{M}{\mathrm{n}}_3\mathrm{Sn}/\mathrm{MgO}/\mathrm{M}{\mathrm{n}}_3\mathrm{Sn}$ antiferromagnetic tunnel junction
• Sub-spin-flop switching of a fully compensated antiferromagnet by magnetic field