Approaches to tunnel magnetoresistance effect with antiferromagnets
arXiv:2410.19513 · doi:10.1088/1361-648X/adc05e
Abstract
The tunnel magnetoresistance (TMR) effect is one of the representative phenomena in spintronics. Ferromagnets, which have a net spin polarization, have been utilized for the TMR effect. Recently, by contrast, the TMR effect with antiferromagnets, which do not possess a macroscopic spin polarization, has been proposed, and also been observed in experiments. In this topical review, we discuss recent developments in the TMR effect, particularly focusing on the TMR effect with antiferromagnets. First, we review how the TMR effect can occur in antiferromagnetic tunnel junctions. The Julliere model, which has been conventionally utilized to grasp the TMR effect with ferromagnets, breaks down for the antiferromagnetic TMR effect. Instead, we see that the momentum dependent spin splitting explains the antiferromagnetic TMR effect. After that, we revisit the TMR effect from viewpoint of the local density of states (LDOS). We particularly focus on the LDOS inside the barrier, and show that the product of the LDOS will qualitatively capture the TMR effect not only in the ferromagnetic tunnel junctions but also in the ferrimagnetic and antiferromagnetic tunnel junctions. This method is expected to work usefully for designing magnetic tunnel junctions.
15 pages, 13 Figures. Manuscript for Invited Topical Review in Journal of Physics: Condensed Matter
References in corpus (30)
- Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
- Advanced capabilities for materials modelling with Quantum ESPRESSO
- Broken Kramers' degeneracy in altermagnetic MnTe
- Altermagnetism: Exploring New Frontiers in Magnetism and Spintronics
- Spontaneous anomalous Hall effect arising from an unconventional compensated magnetic phase in a semiconductor
- Electrical Manipulation of a Topological Antiferromagnetic State
- Non-collinear Antiferromagnets and the Anomalous Hall Effect
- Cluster multipole theory for anomalous Hall effect in antiferromagnets
- Antiferromagnetism in RuO as -wave Pomeranchuk instability
- Observation of Giant Band Splitting in Altermagnetic MnTe
- Itinerant Antiferromagnetism in RuO
- Nonmagnetic Ground State in RuO Revealed by Muon Spin Rotation
- First principles modeling of tunnel magnetoresistance of Fe/MgO/Fe trilayers
- Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions
- Fragility of the magnetic order in the prototypical altermagnet RuO
- Multipole expansion for magnetic structures: A generation scheme for symmetry-adapted orthonormal basis set in crystallographic point group
- All-electrical switching of a topological non-collinear antiferromagnet at room temperature
- Perspective on Metallic Antiferromagnets
- Antiferromagnetic Tunnel Junctions for Spintronics
- Crystal facet orientated Altermagnets for detecting ferromagnetic and antiferromagnetic states by giant tunneling magnetoresistance effect
- Tunneling magnetoresistance in magnetic tunnel junctions with a single ferromagnetic electrode
- Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions
- First-principles spin-transfer torque in CuMnAsGaPCuMnAs junctions
- All-antiferromagnetic electrically controlled memory on silicon featuring large tunneling magnetoresistance
- Nearly perfect spin polarization of noncollinear antiferromagnets
- Crucial role of interfacial - exchange interaction in the temperature dependence of tunnel magnetoresistance
- Intrinsic spin-orbit torque mechanism for deterministic all-electric switching of noncollinear antiferromagnets
- First-principles study on tunnel magnetoresistance effect with Cr-doped RuO electrode
- Local density of states as a probe for tunneling magnetoresistance effect: application to ferrimagnetic tunnel junctions
- High-throughput calculations of antiferromagnets hosting anomalous transport phenomena