All-antiferromagnetic electrically controlled memory on silicon featuring large tunneling magnetoresistance

Abstract

Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon-based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial AFM tunnel junctions. However, these TMR structures were not grown using a silicon-compatible deposition process, and controlling their AFM order required external magnetic fields. Here we show three-terminal AFM tunnel junctions based on the noncollinear antiferromagnet PtMn3, sputter-deposited on silicon. The devices simultaneously exhibit electrical switching using electric currents, and electrical readout by a large room-temperature TMR effect. First-principles calculations explain the TMR in terms of the momentum-resolved spin-dependent tunneling conduction in tunnel junctions with noncollinear AFM electrodes.

References in corpus (26)

• Antiferromagnetic spintronics
• Electrical switching of an antiferromagnet
• Switching of perpendicular magnetization by spin-orbit torques in the absence of external magnetic fields
• Magnetization switching by spin-orbit torque in an antiferromagnet/ferromagnet bilayer system
• Crystal Hall effect in Collinear Antiferromagnets
• Writing and Reading antiferromagnetic Mn${}_2$Au: Néel spin-orbit torques and large anisotropic magnetoresistance
• Tilted spin current generated by the collinear antiferromagnet RuO2
• Electrical Manipulation of a Topological Antiferromagnetic State
• Switching of Perpendicularly Polarized Nanomagnets with Spin Orbit Torque without an External Magnetic Field by Engineering a Tilted Anisotropy
• Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with vertical composition gradient
• Imaging current-induced switching of antiferromagnetic domains in CuMnAs
• Spin Hall magnetoresistance in antiferromagnet/heavy-metal heterostructures
• Electrically induced and detected Néel vector reversal in a collinear antiferromagnet
• Electrical Switching of Tristate Antiferromagnetic Néel Order in $\alpha$-Fe${}_2$O${}_3$ Epitaxial Films
• Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions
• Quantitative Study on Current-Induced Effect in an Antiferromagnet Insulator/Pt Bilayer Film
• Field-free spin-orbit torque switching enabled by interlayer Dzyaloshinskii-Moriya interaction
• Perspective on Metallic Antiferromagnets
• Direct imaging of current-induced antiferromagnetic switching revealing a pure thermomagnetoelastic switching mechanism
• Micromagnetic modeling of Terahertz oscillations in an antiferromagnetic material driven by spin-Hall effect
• Narrow-band tunable THz detector in antiferromagnets via Néel spin-orbit torque and spin-transfer torque
• Observation of current-induced switching in non-collinear antiferromagnetic IrMn${}_3$ by differential voltage measurements
• Tunneling Spectroscopy of Atomically-Thin Al2O3 Films for Tunnel Junctions
• Electrically tunable detector of THz-frequency signals based on an antiferromagnet
• Growth-dependent Interlayer Chiral Exchange and Field-free Switching
• Ab-initio Study on the Magnetic Structures in the Ordered Mn3Pt Alloy

Cited by in corpus (10)

• Spin-Polarized Antiferromagnetic Spintronics
• Spin-Splitting Magnetoresistance in Altermagnetic RuO2 Thin Films
• First-principles study on tunnel magnetoresistance effect with Cr-doped RuO${}_2$ electrode
• Electrically Tunable Picosecond-scale Octupole Fluctuations in Chiral Antiferromagnets
• Harnessing Interlayer Magnetic Coupling for Efficient, Field-Free Current-Induced Magnetization Switching in a Magnetic Insulator
• Full Electrical Switching of a Freestanding Ferrimagnetic Metal for Energy-Efficient Bipolar Neuromorphic Computing
• Approaches to tunnel magnetoresistance effect with antiferromagnets
• Orthogonal Spin-Orbit Torque-Induced Deterministic Switching in NiO
• Ab initio study of magnetoresistance effect in $\mathrm{M}{\mathrm{n}}_3\mathrm{Sn}/\mathrm{MgO}/\mathrm{M}{\mathrm{n}}_3\mathrm{Sn}$ antiferromagnetic tunnel junction
• Spin-Polarized Magnetic Metal Electrodes for Magnetic Tunnel Junctions