activity
20062026
most citedSpin-transfer torque and spin-polarization in topological-insulator/ferromagnet vertical heterostructures

76 citations · 744 across the 31 of their papers we have counts for

collaborators

31 papers

cond-mat.mtrl-sci2026

Observation of current-induced orbital quadrupole accumulation

Geun-Hee Lee, Yubin Ji, Yongho Park +12

Spintronics and orbitronics rely on current-induced accumulations of magnetic dipoles: spin and orbital angular momentum. However, electronic orbitals inherently carry multipoles b…

cond-mat.mes-hall2025

Nonlocal Transport in Cr-doped (Bi,Sb)2Te3: Absence of Nonchiral Edge States

Valery Ortiz Jimenez, Paul M. Haney, Farzad Mahfouzi +3

The quantum anomalous Hall effect shows great promise for realization of the ohm without the need for an external magnetic field. The most mature material platform is magnetically…

cond-mat.mes-hall2025

Electric Field-Induced Kerr Rotation on Metallic Surfaces

Farzad Mahfouzi, Mark D. Stiles, Paul M. Haney

We use a combination of density functional theory calculations and optical modeling to establish that the electric field-induced Kerr rotation in metallic thin films has contributi…

cond-mat.mtrl-sci2025

Strain effects on the fluctuation properties in noncollinear antiferromagnets: a first-principles and macrospin-based study

Mohammad M. Rahman, Farzad Mahfouzi, Matthew W. Daniels +1

We present a theoretical investigation of epitaxial strain effects on the magnetic fluctuation properties of MnSn noncollinear antiferromagnets. Employing density functional th…

cond-mat.mes-hall2024

Current-Induced Circular Dichroism on Metallic Surfaces: A First-Principles Study

Farzad Mahfouzi, Mark D. Stiles, Paul M. Haney

We use {\it ab initio} calculations to understand the current-induced optical response and orbital moment accumulation at the surfaces of metallic films. These two quantities are r…

physics.app-ph2023★ 1 cited

Current manipulation of Giant tunneling altermagnetic resistance in collinear Antiferromagnetic RuO2/MgO/RuO2 sandwich structure

Shijie Xu, Yan Huang, Farzad Mahfouzi +15

As an emerging non-volatile memory technology, magnetic random access memory (MRAM) has key features and advantages including non-volatility, high speed, endurance, low power consu…