Orthogonal Spin-Orbit Torque-Induced Deterministic Switching in NiO
arXiv:2411.06379 · doi:10.1063/5.0223716
Abstract
The electrical switching of antiferromagnet (AFM) is very important for the development of ultrafast magnetic random-access memory (MRAM). This task becomes more difficult in antiferromagnetic oxide NiO which has complex anisotropy. We show that by utilizing two spin-orbit torques (SOT) from orthogonal currents, one can deterministically switch the magnetic moments of NiO in two electrical distinguishable states that can be read out using the spin Hall magnetoresistance. This deterministic switching relies on the symmetry of SOT on different sublattices, where the sign reversal of magnetic moments leads to constructive torques in the beginning and balanced torques in the end. In addition, we show that the easy-plane anisotropy plays a key role in the switching, which has been ignored in some previous works. The uniform magnetic dynamics in this work provides a clear physical picture in understanding the SOT switching of NiO. Furthermore, the electrical writing and reading function in our device advances the development of AFM-MRAM.
References in corpus (27)
- Antiferromagnetic spintronics
- Electrical switching of an antiferromagnet
- Vowel recognition with four coupled spin-torque nano-oscillators
- Relativistic Neel-order fields induced by electrical current in antiferromagnets
- Fast domain wall motion induced by antiferromagnetic spin dynamics at the angular momentum compensation temperature of ferrimagnets
- Stochastic p-bits for Invertible Logic
- Antidamping torque-induced switching in biaxial antiferromagnetic insulators
- Spin transfer and current-induced switching in antiferromagnets
- Observation of stable Neel skyrmions in Co/Pd multilayers with Lorentz transmission electron microscopy
- Ultrafast Magnetization Reversal by Picosecond Electrical Pulses
- Spin Hall magnetoresistance in antiferromagnet/heavy-metal heterostructures
- Experimental demonstration of complete 180 degree reversal of magnetization in isolated Co-nanomagnets on a PMN-PT substrate with voltage generated strain
- Néel Spin Currents in Antiferromagnets
- Magnetization switching in polycrystalline Mn3Sn thin film induced by self-generated spin-polarized current
- Superconductor-altermagnet memory functionality without stray fields
- Time-dependent multistate switching of topological antiferromagnetic order in MnSn
- Strong variation of spin-orbit torques with relative spin relaxation rates in ferrimagnets
- Coupled skyrmion breathing modes in synthetic ferri- and antiferromagnets
- All-antiferromagnetic electrically controlled memory on silicon featuring large tunneling magnetoresistance
- Ultrafast antiferromagnetic switching in NiO induced by spin transfer torques
- Identification of Néel vector orientation in antiferromagnetic domains switched by currents in NiO/Pt thin films
- Extraordinary temperature dependent magnetic anisotropy of the non-collinear antiferromagnet IrMn
- Tuning Dzyaloshinskii-Moriya Interaction in Ferrimagnetic GdCo: A First Principles Approach
- Observation of cluster magnetic octupole domains in the antiferromagnetic Weyl semimetal Mn3Sn nanowire
- Voltage-input spintronic oscillator based on competing effect for extended oscillation regions
- Enhancement of domain-wall mobility detected by NMR at the angular momentum compensation temperature
- Anomalous impact of thermal fluctuations on spintransfer torque induced ferrimagnetic switching