Experimental demonstration of complete 180 degree reversal of magnetization in isolated Co-nanomagnets on a PMN-PT substrate with voltage generated strain

Abstract

Rotating the magnetization of a shape anisotropic magnetostrictive nanomagnet with voltage-generated stress/strain dissipates much less energy than most other magnetization rotation schemes, but its application to writing bits in non-volatile magnetic memory has been hindered by the fundamental inability of stress/strain to rotate magnetization by full 180 degrees. Normally, stress/strain can rotate the magnetization of a shape anisotropic elliptical nanomagnet by only up to 90 degrees, resulting in incomplete magnetization reversal. Recently, we predicted that applying uniaxial stress sequentially along two different axes that are not collinear with the major or minor axis of the elliptical nanomagnet will rotate the magnetization by full 180 degrees. Here, we demonstrate this complete 180 degree rotation in elliptical Co-nanomagnets (fabricated on a piezoelectric substrate) at room temperature. The two stresses are generated by sequentially applying voltages to two pairs of shorted electrodes placed on the substrate such that the line joining the centers of the electrodes in one pair intersects the major axis of a nanomagnet at ~+30 degrees and the line joining the centers of the electrodes in the other pair intersects at ~ -30 degrees. A finite element analysis has been performed to determine the stress distribution underneath the nanomagnets when one or both pairs of electrodes are activated, and this has been approximately incorporated into a micromagnetic simulation of magnetization dynamics to confirm that the generated stress can produce the observed magnetization rotations. This result portends an extremely energy-efficient non-volatile "straintronic" memory technology predicated on writing bits in nanomagnets with electrically generated stress.

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• Magneto-ionic Control of Interfacial Magnetism
• Reversible strain-induced magnetization switching in FeGa nanomagnets: Pathway to a rewritable, non-volatile, non-toggle, straintronic memory cell for extremely low energy operation

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