Anomalous switching pattern in the ferrimagnetic memory cell
arXiv:2411.06321 · doi:10.1016/j.jmmm.2024.172614
Abstract
Replacing the ferromagnet with ferrimagnet (FiM) in the magnetic tunnel junction (MTJ) allows faster magnetization switching in picoseconds. The operation of a memory cell that consists of the MTJ and a transistor requires reversable magnetization switching. When a constant voltage is applied, we find that the spin-transfer torque can only switch the FiM-MTJ from parallel to antiparallel state. This stems from the small switching window of FiM and the dynamic resistance variation during the magnetization switching. We find the resulting current variation can be suppressed by reducing the magnetoresistance ratio. Furthermore, we demonstrate that the switching window can be expanded by adjusting the amount of Gd in FiM. We predict that the polarity of both switching current (Jc,switch) and oscillation current (Jc,osc) reverses at the angular momentum compensation point but not the magnetization compensation point. This anomalous dynamic behavior is attributed to the different physical nature of magnetization switching and oscillation in FiM, which must be considered when designing FiM-based MRAM.
References in corpus (24)
- Magnetic skyrmion artificial synapse for neuromorphic computing
- Vowel recognition with four coupled spin-torque nano-oscillators
- Fast domain wall motion induced by antiferromagnetic spin dynamics at the angular momentum compensation temperature of ferrimagnets
- Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with vertical composition gradient
- Ultrafast Magnetization Reversal by Picosecond Electrical Pulses
- Shape anisotropy revisited in single-digit nanometer magnetic tunnel junctions
- Vanishing skyrmion Hall effect at the angular momentum compensation temperature of a ferrimagnet
- Chiral symmetry breaking for deterministic switching of perpendicular magnetization by spin-orbit torque
- Experimental demonstration of complete 180 degree reversal of magnetization in isolated Co-nanomagnets on a PMN-PT substrate with voltage generated strain
- Thickness Dependence of Spin-Orbit Torques in Ferrimagnetic GdFeCo Alloys
- Strong variation of spin-orbit torques with relative spin relaxation rates in ferrimagnets
- Coupled skyrmion breathing modes in synthetic ferri- and antiferromagnets
- Tuning Dzyaloshinskii-Moriya Interaction in Ferrimagnetic GdCo: A First Principles Approach
- Tunable Magnetic Skyrmions in Ferrimagnetic MnN
- Observation of gyromagnetic reversal
- Spin torque gate magnetic field sensor
- Electrical generation and detection of terahertz signal based on spin-wave emission from ferrimagnets
- Spatially Nonuniform Oscillations in Ferrimagnets Based on an Atomistic Model
- Theoretical Proposal for Determining Angular Momentum Compensation in Ferrimagnets
- Realistic micromagnetic description of all-optical ultrafast switching processes in ferrimagnetic alloys
- Voltage-input spintronic oscillator based on competing effect for extended oscillation regions
- Spin-torque-induced magnetization dynamics in ferrimagnets based on Landau-Lifshitz-Bloch Equation
- Spin-Transfer-Torque Induced Spatially Nonuniform Switching in Ferrimagnets
- Anomalous impact of thermal fluctuations on spintransfer torque induced ferrimagnetic switching