most citedAnomalous switching pattern in the ferrimagnetic memory cell

1 citations · 2 across the 5 of their papers we have counts for

collaborators

6 papers

cond-mat.mes-hall2025

Investigation of Sub-configurations Reveals Stable Spin-Orbit Torque Switching Polarity in Polycrystalline Mn3Sn

Boyu Zhao, Zhengde Xu, Xue Zhang +3

Previous studies have demonstrated the switching of octupole moment in Mn3Sn driven by spin-orbit torque (SOT). However, they have not accounted for the polycrystalline nature of t…

cond-mat.mes-hall20241 cited

Orthogonal Spin-Orbit Torque-Induced Deterministic Switching in NiO

Yixiao Qiao, Zhengde Xu, Zhuo Xu +2

The electrical switching of antiferromagnet (AFM) is very important for the development of ultrafast magnetic random-access memory (MRAM). This task becomes more difficult in antif…

cond-mat.mes-hall20241 cited

Anomalous switching pattern in the ferrimagnetic memory cell

Zhuo Xu, Zhengping Yuan, Xue Zhang +4

Replacing the ferromagnet with ferrimagnet (FiM) in the magnetic tunnel junction (MTJ) allows faster magnetization switching in picoseconds. The operation of a memory cell that con…

cond-mat.mes-hall2024

Spin-Orbit Torque Driven Chiral Domain Wall Motion in Mn3Sn

Zhengde Xu, Yue Zhou, Xue Zhang +3

Noncollinear chiral antiferromagnets, such as Mn3X (X = Sn, Ge), have garnered significant interest in spintronics due to their topologically protected Weyl nodes and large momentu…

cond-mat.mes-hall2024

Revisiting the Analytical Solution of Spin-Orbit Torque Switched Nanoscale Perpendicular Ferromagnet

Xue Zhang, Zhengde Xu, Zhifeng Zhu

The scaling of magnetic memory into nanometer size calls for a theoretical model to accurately predict the switching current. Previous models show large discrepancy with experiment…

cond-mat.mtrl-sci2023

Van der Waals Spin-Orbit Torque Antiferromagnetic Memory

Lishu Zhang, Zhengping Yuan, Jie Yang +7

The technique of conventional ferromagnet/heavy-metal spin-orbit torque (SOT) offers significant potential for enhancing the efficiency of magnetic memories. However, it faces fund…