Energy dissipation and switching delay in stress-induced switching of multiferroic devices in the presence of thermal fluctuations

Abstract

Switching the magnetization of a shape-anisotropic 2-phase multiferroic nanomagnet with voltage-generated stress is known to dissipate very little energy ($<$ 1 aJ for a switching time of $\sim$0.5 ns) at 0 K temperature. Here, we show by solving the stochastic Landau-Lifshitz-Gilbert equation that switching can be carried out with $\sim$100% probability in less than 1 ns while dissipating less than 2 aJ at {\it room temperature}. This makes nanomagnetic logic and memory systems, predicated on stress-induced magnetic reversal, one of the most energy-efficient computing hardware extant. We also study the dependence of energy dissipation, switching delay, and the critical stress needed to switch, on the rate at which stress is ramped up or down.

References in corpus (2)

• Non-collinear Magnetoelectronics
• Switching Energy of Ferromagnetic Logic Bits

Cited by in corpus (44)

• Experimental demonstration of complete 180 degree reversal of magnetization in isolated Co-nanomagnets on a PMN-PT substrate with voltage generated strain
• Giant Voltage Manipulation of MgO-based Magnetic Tunnel Junctions via Localized Anisotropic Strain: a Potential Pathway to Ultra-Energy-Efficient Memory Technology
• Straintronics: Manipulating the Magnetization of Magnetostrictive Nanomagnets with Strain for Energy-Efficient Applications
• Binary switching in a symmetric potential landscape
• Pattern Recognition with Magnonic Holographic Memory Device
• Optical Writing of Magnetic Properties by Remanent Photostriction
• Energy-efficient magnetoelastic non-volatile memory
• Extreme sub-wavelength magneto-elastic electromagnetic antenna implemented with multiferroic nanomagnets
• Electric field control of magnetic states in isolated and dipole-coupled FeGa nanomagnets delineated on a PMN-PT substrate
• Self-similar Magneto-electric Nanocircuit Technology for Probabilistic Inference Engines
• Energy-efficient switching of nanomagnets for computing: Straintronics and other methodologies
• Magneto-elastic universal logic gate: A non-volatile, error-resilient Boolean logic gate with ultra-low energy-delay product
• Ultra-low-energy non-volatile straintronic computing using single multiferroic composites
• Ultra-low-energy computing paradigm using giant spin Hall devices
• Dynamic Error in Strain Induced Magnetization Reversal of Nanomagnets due to Incoherent Switching and Formation of Metastable States: A Size-dependent Study
• Exploring Performance, Coherence, and Clocking of Magnetization in Multiferroic Four-State Nanomagnets
• Ultralow Energy Analog Straintronics Using Multiferroic Composites
• Robustness and scalability of p-bits implemented with low energy barrier nanomagnets
• Energy dissipation and error probability in fault-tolerant binary switching
• Applications of Nanomagnets as Dynamical Systems
• Critical analysis and remedy of switching failures in straintronic logic using Bennett clocking in the presence of thermal fluctuations
• Separating read and write units in multiferroic devices
• A Microwave Oscillator Based on a Single Straintronic Magneto-tunneling Junction
• A Critical Analysis of the Feasibility of Pure Strain-Actuated Giant Magnetostrictive Nanoscale Memories
• Nanomagnetic Boolean Logic -- The Tempered (and Realistic) Vision
• Magneto-elastic switching of magnetostrictive nanomagnets with in-plane shape anisotropy
• Comment on some articles regarding magnetization switching and computing using strain-mediated multiferroic composites
• Area-Delay-Energy Tradeoffs of Strain-Mediated Multiferroic Devices
• Ultra-low-energy Electric field-induced Magnetization Switching in Multiferroic Heterostructures
• Sensitivity of the Power Spectra of Magnetization Fluctuations in Low Barrier Nanomagnets to Barrier Height Modulation and Defects
• A Non-Volatile All-Spin Non-Binary Matrix Multiplier: An Efficient Hardware Accelerator for Machine Learning
• Electric field-induced magnetization switching in interface-coupled multiferroic heterostructures: A highly-dense, non-volatile, and ultra-low-energy computing paradigm
• Ultra-low-energy straintronics using multiferroic composites
• Electrical Writing of Magnetic and Resistive Multistates in CoFe Films Deposited onto Pb[Zr${}_x$Ti${}_{1-x}$]O${}_3$
• Magneto Acoustic Spin Hall Oscillators
• Ultra-Low-Energy Straintronics Using Multiferroic Composites
• Ultra-low-energy straintronics using multiferroic composites
• Landauer limit of energy dissipation in a magnetostrictive particle
• Surface Acoustic Wave induced modulation of tunneling magnetoresistance in magnetic tunnel junctions
• Energy-efficient hybrid spintronic-straintronic reconfigurable bit comparator
• Reducing error rates in straintronic multiferroic dipole-coupled nanomagnetic logic by pulse shaping
• Strained topological insulator spin-orbit torque random access memory (STI-SOTRAM) bit cell for energy-efficient Processing in Memory
• Magnonic Holographic Memory: from Proposal to Device
• Voltage-induced strain clocking of nanomagnets with perpendicular magnetic anisotropies