Ultra-low-energy computing paradigm using giant spin Hall devices
arXiv:1506.07863 · doi:10.1088/0022-3727/47/42/422001
Abstract
Spin Hall effect converts charge current to spin current, which can exert spin-torque to switch the magnetization of a nanomagnet. Recently, it is shown that the ratio of spin current to charge current using spin Hall effect can be made more than unity by using the areal geometry judiciously, unlike the case of conventional spin-transfer-torque switching of nanomagnets. This can enable energy-efficient means to write a bit of information in nanomagnets. Here, we study the energy dissipation in such spin Hall devices. By solving stochastic Landau-Lifshitz-Gilbert equation of magnetization dynamics in the presence of room temperature thermal fluctuations, we show a methodology to simultaneously reduce switching delay, its variance and energy dissipation, while lateral dimensions of the spin Hall devices are scaled down.
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Cited by in corpus (11)
- Estimating spin diffusion length and spin Hall angle from spin pumping-induced inverse spin Hall voltages
- Ultralow Energy Analog Straintronics Using Multiferroic Composites
- Ultra-low-energy Electric field-induced Magnetization Switching in Multiferroic Heterostructures
- Comment on some articles regarding magnetization switching and computing using strain-mediated multiferroic composites
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- Spin circuit representation of spin pumping
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