Optical Writing of Magnetic Properties by Remanent Photostriction

Abstract

We present an optically induced remanent photostriction in BiFeO3, resulting from the photovoltaic effect, which is used to modify the ferromagnetism of Ni film in a hybrid BiFeO3/Ni structure. The 75% change in coercivity in the Ni film is achieved via optical and nonvolatile control. This photoferromagnetic effect can be reversed by static or ac electric depolarization of BiFeO3. Hence, the strain dependent changes in magnetic properties are written optically, and erased electrically. Light-mediated straintronics is therefore a possible approach for low-power multistate control of magnetic elements relevant for memory and spintronic applications.

arXiv commentReport on photopolarization effect in BiFeO3 used to write magnetic properties via the remanent photostriction

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Cited by in corpus (11)

• Photoferroelectric oxides
• Photostrictive two-dimensional materials in the monochalcogenide family
• Tuning photovoltaic response in Bi2FeCrO6 films by ferroelectric poling
• Optically rewritable memory in a graphene/ferroelectric-photovoltaic heterostructure
• Photovoltaic effect and photopolarization in Pb[(Mg1/3Nb2/3)0.68Ti0.32]O3 crystal
• Photoinduced Domain Pattern Transformation in Ferroelectric/Dielectric Superlattices
• Thermoelastic enhancement of the magnonic spin Seebeck effect in thin films and bulk samples
• Graphene magnetoresistance control by photoferroelectric substrate
• Larger photovoltaic effect and hysteretic photocarrier dynamics in Pb[(Mg1/3Nb2/3)0.70Ti0.30]O3 crystal
• Stress-induced modification of gyration dynamics in stacked double-vortex structures studied by micromagnetic simulations
• Thermal treatment effects on PMN-0.4PT/Fe multiferroic heterostructures