Optically rewritable memory in a graphene/ferroelectric-photovoltaic heterostructure

Abstract

Achieving optical operation of logic elements, especially those that involve 2D layers, can open the long sought era of optical computing. However, the efficient optical modulation of the electronic properties of 2D materials including memory effect is currently missing. Here we report a fully optical control of the conductivity of a graphene with write/erase option yet under ultralow optical fluence. The competition between light-induced charge generation in ferroelectric-photovoltaic substrate with subsequent relaxation processes provides the selective photocarrier trapping control affecting the doping of 2D overlayer. These findings open the road to photonic control of 2D devices for all -optical modulators and a variety of all-optical logic circuits, memories and field-effect transistors.

arXiv comment10 pages, 5 figures, research paper

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• Graphene magnetoresistance control by photoferroelectric substrate
• Single wavelength operating neuromorphic device based on a graphene-ferroelectric transistor
• Wavelength-Resolved Control of Photovoltaic Screening and Defect-Mediated Doping in Photo-Ferroelectric/Graphene Devices