Four-state nanomagnetic logic using multiferroics

Abstract

The authors show how to implement a 4-state universal logic gate (NOR) using three strain-coupled magnetostrictive-piezoelectric multiferroic nanomagnets (e.g. Ni/PZT) with biaxial magnetocrystalline anisotropy. Two of the nanomagnets encode the 2-state input bits in their magnetization orientations and the third nanomagnet produces the output bit via dipole interaction with the input nanomagnets. A voltage pulse alternating between -0.2 V and +0.2 V is applied to the PZT layer of the third nanomagnet and generates alternating tensile and compressive stress in its Ni layer to produce the output bit, while dissipating ~ 57,000 kT (0.24 fJ) of energy per gate operation.

References in corpus (5)

• Spin Transfer Torques
• Bennett clocking of nanomagnetic logic using electrically induced rotation of magnetization in multiferroic single-domain nanomagnets
• Electron Spin for Classical Information Processing: A Brief Survey of Spin-Based Logic Devices, Gates and Circuits
• Switching Energy of Ferromagnetic Logic Bits
• Magnetoelectric Effect in Ni-PZT-Ni Cylindrical Layered Composite Synthesized by Electro-deposition

Cited by in corpus (10)

• Experimental Clocking of Nanomagnets with Strain for Ultra Low Power Boolean Logic
• Energy dissipation and switching delay in stress-induced switching of multiferroic devices in the presence of thermal fluctuations
• Switching of Dipole Coupled Multiferroic Nanomagnets in the Presence of Thermal Noise: Reliability of Nanomagnetic Logic
• Boolean and Non-Boolean Computation With Spin Devices
• Exploring Performance, Coherence, and Clocking of Magnetization in Multiferroic Four-State Nanomagnets
• An Energy-Efficient Bennett Clocking Scheme for 4-State Multiferroic Logic
• An ultrafast image recovery and recognition system implemented with nanomagnets possessing biaxial magnetocrystalline anisotropy
• From materials to systems: a multiscale analysis of nanomagnetic switching
• Comment on some articles regarding magnetization switching and computing using strain-mediated multiferroic composites
• Ultra-low-energy Electric field-induced Magnetization Switching in Multiferroic Heterostructures