Fully electrically read-write device out of a ferromagnetic semiconductor

Abstract

We report the realization of a read-write device out of the ferromagnetic semiconductor (Ga,Mn)As as the first step to fundamentally new information processing paradigm. Writing the magnetic state is achieved by current-induced switching and read-out of the state is done by the means of the tunneling anisotropic magneto resistance (TAMR) effect. This one bit demonstrator device can be used to design a electrically programmable memory and logic device.

4 pages, 4 figures

References in corpus (4)

• Lithographic engineering of anisotropies in (Ga,Mn)As
• An extensive comparison of anisotropies in MBE grown (Ga,Mn)As material
• Bound hole states in a ferromagnetic (Ga,Mn)As environment
• Current Assisted Magnetization Switching in (Ga,Mn)As Nanodevices

Cited by in corpus (8)

• Dilute ferromagnetic semiconductors: Physics and spintronic structures
• Room-temperature ferromagnetism in monolayer WSe2 semiconductor via vanadium dopant
• Energy dissipation and switching delay in stress-induced switching of multiferroic devices in the presence of thermal fluctuations
• Ultra-low-energy non-volatile straintronic computing using single multiferroic composites
• Angle-Dependent Spin-Wave Resonance Spectroscopy of (Ga,Mn)As Films
• Long Range Magnetic order stabilized by acceptors
• Electronic control of magnonic and spintronic devices
• Impact of current paths on measurement of tunneling magnetoresistance and spin torque critical current densities in GaMnAs-based magnetic tunnel junctions