An extensive comparison of anisotropies in MBE grown (Ga,Mn)As material
arXiv:0802.4206 · doi:10.1088/1367-2630/10/5/055007
Abstract
This paper reports on a detailed magnetotransport investigation of the magnetic anisotropies of (Ga,Mn)As layers produced by various sources worldwide. Using anisotropy fingerprints to identify contributions of the various higher order anisotropy terms, we show that the presence of both a [100] and a [110] uniaxial anisotropy in addition to the primary ([100] + [010]) anisotropy is common to all medium doped (Ga,Mn)As layers typically used in transport measurement, with the amplitude of these uniaxial terms being characteristic of the individual layers.
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- Engineering Large Anisotropic Magnetoresistance in La0.7Sr0.3MnO3 Films at Room Temperature
- Origin of bulk uniaxial anisotropy in zinc-blende dilute magnetic semiconductors
- Magnetic anisotropy of epitaxial (Ga,Mn)As on (113)A GaAs
- Fully electrically read-write device out of a ferromagnetic semiconductor
- Cubic anisotropy in high homogeneity thin (Ga,Mn)As layers
- Diffusion thermopower of (Ga,Mn)As/GaAs tunnel junctions
- Complex domain wall dynamics in compressively strained GaMnAs epilayers
- Influence of the different strains components on the uniaxial magnetic anisotropy constants for (Ga,Mn)As bulk system: a First-Principles Study