Diffusion thermopower of (Ga,Mn)As/GaAs tunnel junctions

Abstract

We report the observation of tunneling anisotropic magnetothermopower, a voltage response to a temperature difference across an interface between a normal and a magnetic semiconductor. The resulting voltage is related to the energy derivative of the density of states in the magnetic material, and thus has a strongly anisotropic response to the direction of magnetization in the material. The effect will have relevance to the operation of semiconductor spintronic devices, and may indeed already play a role in correctly interpreting the details of some earlier spin injection studies.

References in corpus (5)

• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• Observation of the Spin-Seebeck Effect in a Ferromagnetic Semiconductor
• Detailed transport investigation of the magnetic anisotropy of (Ga,Mn)As
• Transport Characterization of the Magnetic Anisotropy of (Ga,Mn)As
• An extensive comparison of anisotropies in MBE grown (Ga,Mn)As material

Cited by in corpus (8)

• Dilute ferromagnetic semiconductors: Physics and spintronic structures
• Spin-dependent phenomena and device concepts explored in (Ga,Mn)As
• Thermal spin current and magnetothermopower by Seebeck spin tunneling
• Systematic Investigation of Anisotropic Magneto-Peltier Effect and Anomalous Ettingshausen Effect in Ni Thin Films
• Magneto-electric and thermo-magneto-electric effects in ferromagnetic transition-metal alloys from first-principles
• Tunneling Anisotropic Thermopower and Seebeck Effects in Magnetic Tunnel Junctions
• Large Tunneling Anisotropic Magneto-Seebeck Effect in a CoPt|MgO|Pt Tunnel Junction
• Thermopower of few-electron quantum dots with Kondo correlations