Detailed transport investigation of the magnetic anisotropy of (Ga,Mn)As

Abstract

This paper discusses transport methods for the investigation of the (Ga,Mn)As magnetic anisotropy. Typical magnetoresistance behaviour for different anisotropy types is discussed, focusing on an in depth discussion of the anisotropy fingerprint technique and extending it to layers with primarily uniaxial magnetic anisotropy. We find that in all (Ga,Mn)As films studied, three anisotropy components are always present. The primary biaxial along ([100] and [010]) along with both uniaxial components along the [110] and [010] crystal directions which are often reported separately. Various fingerprints of typical (Ga,Mn)As transport samples at 4 K are included to illustrate the variation of the relative strength of these anisotropy terms. We further investigate the temperature dependence of the magnetic anisotropy and the domain wall nucleation energy with the help of the fingerprint method.

References in corpus (7)

• Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices
• Tunneling Anisotropic Magnetoresistance: A spin-valve like tunnel magnetoresistance using a single magnetic layer
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• Anisotropic Magnetoresistance in Ga${}_{1-x}$Mn${}_x$As
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• Magnetic properties of wurtzite (Ga,Mn)As
• Complex domain wall dynamics in compressively strained GaMnAs epilayers
• Phenomenological theory of magnetization reversal in nanosystems with competing anisotropies
• Temperature dependent Neel wall dynamics in GaMnAs/GaAs