Temperature dependent Neel wall dynamics in GaMnAs/GaAs

Abstract

Extensive Kerr microscopy studies reveal a strongly temperature dependent domain wall dynamics in Hall-bars made from compressively strained GaMnAs. Depending on the temperature magnetic charging of domain walls is observed and nucleation rates depend on the Hall-geometry with respect to the crystal axes. Above a critical temperature where a biaxial-to-uniaxial anisotropy transition occurs a drastic increase of nucleation events is observed. Below this temperature, the nucleation of domains tends to be rather insensitive to temperature. This first spatially resolved study of domain wall dynamics in patterned GaMnAs at variable temperatures has important implications for potential single domain magneto-logic devices made from ferromagnetic semiconductors.

Figures 2 and 6 not correctly TeXified

References in corpus (9)

• Theory of ferromagnetic (III,Mn)V semiconductors
• Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices
• Reorientation Transition in Single-Domain (Ga,Mn)As
• Control of magnetic anisotropy in (Ga,Mn)As by lithography-induced strain relaxation
• Transport Characterization of the Magnetic Anisotropy of (Ga,Mn)As
• Detailed transport investigation of the magnetic anisotropy of (Ga,Mn)As
• Domain walls in (Ga,Mn)As diluted magnetic semiconductor
• Layer-resolved imaging of domain wall interactions in magnetic tunnel junction-like trilayers
• Complex domain wall dynamics in compressively strained GaMnAs epilayers