41 citations · 69 across the 6 of their papers we have counts for
6 papers
Electronic properties of Bi-doped GaAs(001) semiconductors
Jan Honolka, Conor D. Hogan, Martin Vondracek +3
Despite its potential in the fields of optoelectronics and topological insulators, experimental electronic band structure studies of Bi-doped GaAs are scarce. The reason is the com…
Manipulation of electrical and ferromagnetic properties of photo-sensitized (Ga,Mn)As
L. Herrera Diez, M. Konuma, E. Placidi +6
We present the manipulation of magnetic and electrical properties of (Ga,Mn)As by the adsorption of dye-molecules as a first step towards the realization of light-controlled magnet…
Temperature dependent Neel wall dynamics in GaMnAs/GaAs
J. Honolka, L. Herrera Diez, R. K. Kremer +3
Extensive Kerr microscopy studies reveal a strongly temperature dependent domain wall dynamics in Hall-bars made from compressively strained GaMnAs. Depending on the temperature ma…
Complex domain wall dynamics in compressively strained GaMnAs epilayers
L. Herrera Diez, R. K. Kremer, A. Enders +6
The domain wall induced reversal dynamics in compressively strained GaMnAs was studied employing the magneto-optical Kerr effect and Kerr microscopy. Due to the influence of an uni…
Experimental corroboration of the Mulheran-Blackman explanation of the scale invariance in thin film growth: the case of InAs quantum dots on GaAs(001)
M. Fanfoni, E. Placidi, F. Arciprete +3
Mulheran and Blackman have provided a simple and clear explanation of the scale invariance of the island size distribution at the early stage of film growth [Phil. Mag. Lett. 72, 5…
How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: the case of InAs/GaAs(001)
F. Arciprete, E. Placidi, V. Sessi +3
The two- to three-dimensional growth transition in the InAs/GaAs(001) heterostructure has been investigated by atomic force microscopy. The kinetics of the density of three dimensi…