Domain walls in (Ga,Mn)As diluted magnetic semiconductor
arXiv:0802.1574 · doi:10.1103/PhysRevLett.100.047202
Abstract
We report experimental and theoretical studies of magnetic domain walls in an in-plane magnetized (Ga,Mn)As dilute moment ferromagnetic semiconductor. Our high-resolution electron holography technique provides direct images of domain wall magnetization profiles. The experiments are interpreted based on microscopic calculations of the micromagnetic parameters and Landau-Lifshitz-Gilbert simulations. We find that the competition of uniaxial and biaxial magnetocrystalline anisotropies in the film is directly reflected in orientation dependent wall widths, ranging from approximately 40 nm to 120 nm. The domain walls are of the Néel type and evolve from near- walls at low-temperatures to large angle [10]-oriented walls and small angle [110]-oriented walls at higher temperatures.
5 pages, 4 figures
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Cited by in corpus (11)
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- Magneto crystalline anisotropies in (Ga,Mn)As: A systematic theoretical study and comparison with experiment
- Spin-orbit coupling effect in (Ga,Mn)As films: anisotropic exchange interactions and magnetocrystalline anisotropy
- Interlayer and interfacial exchange coupling in ferromagnetic metal/semiconductor heterostructures
- Current-induced interactions of multiple domain walls in magnetic quantum wires
- Phenomenological theory of magnetization reversal in nanosystems with competing anisotropies
- Temperature dependent Neel wall dynamics in GaMnAs/GaAs
- Manipulation of the magnetic configuration of (Ga,Mn)As nanostructures
- Domain Wall Resistance in Perpendicular (Ga,Mn)As: dependence on pinning
- Role of non-collinear magnetization: from ferromagnetic nano wires to quantum rings
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