Theory of Current-Driven Domain Wall Motion: A Poorman's Approach
arXiv:cond-mat/0308464 · doi:10.1103/PhysRevLett.92.086601
Abstract
A self-contained theory of the domain wall dynamics in ferromagnets under finite electric current is presented. The current is shown to have two effects; one is momentum transfer, which is proportional to the charge current and wall resistivity ($\rhow$), and the other is spin transfer, proportional to spin current. For thick walls, as in metallic wires, the latter dominates and the threshold current for wall motion is determined by the hard-axis magnetic anisotropy, except for the case of very strong pinning. For thin walls, as in nanocontacts and magnetic semiconductors, the momentum-transfer effect dominates, and the threshold current is proportional to $\Vz/\rhow$, $\Vz$ being the pinning potential.
References in corpus (6)
- Real-space observation of current-driven domain wall motion in submicron magnetic wires
- Spin pumping and magnetization dynamics in metallic multilayers
- Switching a spin-valve back and forth by current-induced domain wall motion
- Domain wall propagation in magnetic nanowires by spin polarized current injection
- Very large magnetoresistance in lateral ferromagnetic (Ga,Mn)As wires with nanoconstrictions
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