Electronic transport in ferromagnetic conductors with inhomogeneous magnetic order parameter -- domain-wall resistance
arXiv:0903.3033 · doi:10.1103/PhysRevB.80.104435
Abstract
We microscopically derive transport equations for the conduction electrons in ferromagnetic materials with an inhomogeneous magnetization profile. Our quantum kinetic approach includes elastic scattering and anisotropic spin-flip scattering at magnetic impurities. In the diffusive limit, we calculate the resistance through a domain wall and find that the domain-wall resistance can be positive or negative. In the limit of long domain walls we derive analytical expressions and compare them with existing works, which used less general models or different theoretical frameworks.
19 Pages
References in corpus (4)
- Transport theory for disordered multiple-band systems: Anomalous Hall effect and anisotropic magnetoresistance
- Magnetic memory and current amplification devices using moving domain walls
- Angular dependence of domain wall resistivity in artificial magnetic domain structures
- Hybrid skew scattering regime of the anomalous Hall effect in Rashba systems: unifying Keldysh, Boltzmann, and Kubo formalisms
Cited by in corpus (5)
- Hydrodynamic theory of coupled current and magnetization dynamics in spin-textured ferromagnets
- Effective Quantum Theories for Transport in Inhomogeneous Systems with Non-trivial Band Structure
- Domain-wall induced large magnetoresistance effects at zero applied field in ballistic nanocontacts
- Scaling of intrinsic domain wall magneto-resistance with confinement in electromigrated nanocontacts
- Negative differential magneto-resistance in ferromagnetic wires with domain walls