Intrinsic Domain Wall Resistance in Ferromagnetic Semiconductors

Abstract

Transport through zincblende magnetic semiconductors with magnetic domain walls is studied theoretically. We show that these magnetic domain walls have an intrinsic resistance due to the spin-orbit interaction. The intrinsic resistance is independent of the domain wall shape and width when the latter is larger than the Fermi wavelength. For typical parameters, the intrinsic domain wall resistance is comparable to the Sharvin resistance and should be experimentally measurable.

arXiv commentFinal version

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• Giant current-driven domain wall mobility in (Ga,Mn)As
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• Intrinsic Coupling between Current and Domain Wall Motion in (Ga,Mn)As
• Gauge Field Formulation of Adiabatic Spin Torques
• Reflectionless Transport of Surface Dirac Fermions on Topological Insulators with Induced Ferromagnetic Domain Walls
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• Helicity-protected domain-wall magnetoresistance in ferromagnetic Weyl semimetal
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• Thermopower and Thermally Induced Domain Wall Motion in (Ga,Mn)As
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• Current-induced spin torques in III-V ferromagnetic semiconductors
• A generalized Stoner criterion and versatile spin ordering in two-dimensional spin-orbit coupled electron systems
• External Control of a Metal-Insulator Transition in GaMnAs Wires
• Nature of field-induced transitions and hysteretic magnetoresistance in non-collinear antiferromagnet EuIn2As2
• Anisotropic magnetoresistance contribution to measured domain wall resistances of in-plane magnetised (Ga,Mn)As
• Emergent electric field induced by dissipative sliding dynamics of domain walls in a Weyl magnet
• Domain Wall Resistance in Perpendicular (Ga,Mn)As: dependence on pinning