External Control of a Metal-Insulator Transition in GaMnAs Wires
arXiv:0709.3847 · doi:10.1103/PhysRevLett.101.016801
Abstract
Quantum transport in disordered ferromagnetic (III,Mn)V semiconductors is studied theoretically. Mesoscopic wires exhibit an Anderson disorder-induced metal-insulator transition that can be controlled by a weak external magnetic field. This metal-insulator transition should also occur in other materials with large anisotropic magneto resistance effects. The transition can be useful for studies of zero-temperature quantum critical phase transitions and fundamental material properties.
Major revised final version