External Control of a Metal-Insulator Transition in GaMnAs Wires

Abstract

Quantum transport in disordered ferromagnetic (III,Mn)V semiconductors is studied theoretically. Mesoscopic wires exhibit an Anderson disorder-induced metal-insulator transition that can be controlled by a weak external magnetic field. This metal-insulator transition should also occur in other materials with large anisotropic magneto resistance effects. The transition can be useful for studies of zero-temperature quantum critical phase transitions and fundamental material properties.

arXiv commentMajor revised final version

References in corpus (13)

• Theory of ferromagnetic (III,Mn)V semiconductors
• Disorder effects in diluted magnetic semiconductors
• Anisotropic Magnetoresistance in Ga${}_{1-x}$Mn${}_x$As
• Anisotropic Magnetoresistance and Magnetic Anisotropy in High-quality (Ga,Mn)As Films
• Scaling of the Conductivity with Temperature and Uniaxial Stress in Si:B at the Metal-Insulator Transition
• Exploiting Locally Imposed Anisotropies in (Ga,Mn)As: a Non-volatile Memory Device
• Giant current-driven domain wall mobility in (Ga,Mn)As
• Dephasing in (Ga,Mn)As nanowires and rings
• Universal conductance fluctuations in epitaxial GaMnAs ferromagnets: structural and spin disorder
• Magnetization-Switched Metal-Insulator Transition in a (Ga,Mn)As Tunnel Device
• Scaling theory of magneto-resistance in disordered local moment ferromagnets
• Intrinsic Domain Wall Resistance in Ferromagnetic Semiconductors
• Mesoscopic conductance effects in InMnAs structures

Cited by in corpus (5)

• Scattering Theory of Charge-Current Induced Magnetization Dynamics
• Gilbert damping in noncollinear ferromagnets
• Intrinsic Coupling between Current and Domain Wall Motion in (Ga,Mn)As
• Scaling analysis of the magnetoresistance in Ga_{1-x}Mn_xAs
• Effective Magnetic Monopoles and Universal Conductance Fluctuations