Scaling analysis of the magnetoresistance in Ga_{1-x}Mn_xAs

Abstract

We compare experimental resistivity data on Ga_{1-x}Mn_xAs films with theoretical calculations using a scaling theory for strongly disordered ferromagnets. All characteristic features of the temperature dependence of the resistivity can be quantitatively understood through this approach as originating from the close vicinity of the metal-insulator transition. In particular, we find that the magnetic field induced changes in resistance cannot be explained within a mean-field treatment of the magnetic state, and that accounting for thermal fluctuations is crucial for a quantitative analysis. Similarly, while the non-interacting scaling theory is in reasonable agreement with the data, we find clear evidence in favor of interaction effects at low temperatures.

4 pages, 3 figures

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Cited by in corpus (9)

• Electrodynamics of Correlated Electron Materials
• Visualizing Critical Correlations near the Metal-Insulator Transition in Ga1-xMnxAs
• Charge inhomogeneities and transport in semiconductor heterostructures with a manganese $\delta$-layer
• Room temperature ferromagnetism and anomalous Hall effect in Si_{1-x}Mn_x (x = 0.35) alloys
• Localization and the Anomalous Hall Effect in a "Dirty" Metallic Ferromagnet
• Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devices
• Theory of optical conductivity for dilute GaMnAs
• Rapid diffusion of electrons in GaMnAs
• Seeing Quantum Fractals