Temperature Dependence of the Dielectric Constant and Resistivity of Diluted Magnetic Semiconductors

Abstract

We study the effect that the ferromagnetic order has on the electrical properties of Diluted Magnetic Semiconductors. We analyze the temperature dependence of the dielectric constant and of the resistivity of Ga${}_{1-x}$Mn${}_x$As. In our treatment the electronic structure of the semiconductor is described by a six band Kohn-Luttinger Hamiltonian, the thermal fluctuations of the Mn magnetic moments are treated in the mean field approximation, the carrier-carrier interaction within the random phase approximation, and the transport properties using the relaxation time approximation. We find that the Thomas-Fermi length changes near 8% when going from the ferromagnetic to the paramagnetic phase. We also find, in good agreement with the experiments, that the resistivity changes near 20% when going from zero to the Curie temperature. We explain this change in the resistivity in terms of the variation of the Fermi surface and the transport scattering time when going from the ferromagnetic phase to the paramagnetic phase.

arXiv comment4 pages, 3 figures

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Cited by in corpus (15)

• Theory of ferromagnetic (III,Mn)V semiconductors
• Curie point singularity in the temperature derivative of resistivity in (Ga,Mn)As
• Interplay between carrier localization and magnetism in diluted magnetic and ferromagnetic semiconductors
• Curie temperature versus hole concentration in field-effect structures of Ga1-xMnxAs
• Magneto-transport and magneto-optical properties of ferromagnetic (III,Mn)V semicondcutors: a review
• Origin of bulk uniaxial anisotropy in zinc-blende dilute magnetic semiconductors
• Transport properties of diluted magnetic semiconductors: Dynamical mean field theory and Boltzmann theory
• Disorder-Induced Resistive Anomaly Near Ferromagnetic Phase Transitions
• Scaling theory of magneto-resistance in disordered local moment ferromagnets
• Scaling analysis of the magnetoresistance in Ga_{1-x}Mn_xAs
• Response properties of III-V dilute magnetic semiconductors: interplay of disorder, dynamical electron-electron interactions and band-structure effects
• Theory of optical conductivity for dilute GaMnAs
• Dielectric Function of Diluted Magnetic Semiconductors in the Infrared Regime
• Temperature-dependent resistivity of ferromagnetic GaMnAs: Interplay between impurity scattering and many-body effects
• Transport in the metallic regime of Mn doped III-V Semiconductors