Temperature-dependent resistivity of ferromagnetic GaMnAs: Interplay between impurity scattering and many-body effects
arXiv:0906.3526 · doi:10.1103/PhysRevB.80.205202
Abstract
The static conductivity of the dilute magnetic semiconductor GaMnAs is calculated using the memory function formalism and time-dependent density-functional theory to account for impurity scattering and to treat Hartree and exchange interactions within the hole gas. We find that the Coulomb scattering off the charged impurities alone is not sufficient to explain the experimentally observed drop in resistivity below the ferromagnetic transition temperature: the often overlooked scattering off the fluctuations of localized spins is shown to play a significant role.
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