Infrared conductivity of metallic (III,Mn)V ferromagnets
arXiv:cond-mat/0204209 · doi:10.1103/PhysRevB.66.041202
Abstract
We present a theory of the infrared conductivity and absorption coefficients of metallic (III,Mn)V ferromagnetic semiconductors. We find that the conductivity is dominated by inter-valence-band transitions that produce peaks at and obscure the broadened Drude peak. We demonstrate that transverse f-sum rule measurements can be used to extract accurate values for the free carrier density, bypassing the severe characterization difficulties that have till now been created by the large anomalous Hall effect in these materials.
5 pages, 3 figures. Model parameters in figures of previous version did not match caption. Web-page link corrected
References in corpus (2)
Cited by in corpus (34)
- Anomalous Hall effect
- Theory of ferromagnetic (III,Mn)V semiconductors
- Dilute ferromagnetic semiconductors: Physics and spintronic structures
- Electrodynamics of Correlated Electron Materials
- Spin-dependent phenomena and device concepts explored in (Ga,Mn)As
- Impurity Band Conduction in a High Temperature Ferromagnetic Semiconductor
- On the character of states near the Fermi level in (Ga,Mn)As: impurity to valence band crossover
- Disorder effects in diluted magnetic semiconductors
- Strain-Induced Room-Temperature Ferromagnetic Semiconductors with Large Anomalous Hall Conductivity in Two-Dimensional Cr2Ge2Se6
- DC-transport properties of ferromagnetic (Ga,Mn)As semiconductors
- Optical Properties of III-Mn-V Ferromagnetic Semiconductors
- Magnetization relaxation in (Ga,Mn)As ferromagnetic semiconductors
- Magneto crystalline anisotropies in (Ga,Mn)As: A systematic theoretical study and comparison with experiment
- Magneto-transport and magneto-optical properties of ferromagnetic (III,Mn)V semicondcutors: a review
- Systematic study of Mn-doping trends in optical properties of (Ga,Mn)As
- Single-Band Model for Diluted Magnetic Semiconductors: Dynamical and Transport Properties and Relevance of Clustered States
- Infrared magneto-optical properties of (III,Mn)V ferromagetic semiconductors
- Disorder-induced noncollinear ferromagnetism in models for (III,Mn)V semiconductors
- Non-Drude Optical Conductivity of (III,Mn)V Ferromagnetic Semiconductors
- Optical properties of metallic (III,Mn)V ferromagnetic semiconductors in the infrared to visible range
- An infrared probe of the insulator-to-metal transition in GaMnAs and GaBeAs
- Critical Temperatures of a Two-Band Model for Diluted Magnetic Semiconductors
- Ferromagnetism and infrared electrodynamics of GaMnAs}
- Electronic and optical properties of ferromagnetic GaMnAs in a multi-band tight-binding approach
- Theory of spin waves in diluted-magnetic-semiconductor quantum wells
- Optical conductivity of Mn doped GaAs
- Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devices
- Response properties of III-V dilute magnetic semiconductors: interplay of disorder, dynamical electron-electron interactions and band-structure effects
- Theoretical models of ferromagnetic III-V semiconductors
- Dielectric Function of Diluted Magnetic Semiconductors in the Infrared Regime
- Temperature-dependent resistivity of ferromagnetic GaMnAs: Interplay between impurity scattering and many-body effects
- Determining carrier densities in InMnAs by cyclotron resonance
- Enhanced carrier scattering rates in dilute magnetic semiconductors with correlated impurities
- Electrical and optical conductivities of hole gas in -doped bulk III-V semiconductors