Strain-Induced Room-Temperature Ferromagnetic Semiconductors with Large Anomalous Hall Conductivity in Two-Dimensional Cr2Ge2Se6

Abstract

By density functional theory calculations, we predict a stable two-dimensional (2D) ferromagnetic semiconductor Cr${}_2$Ge${}_2$Se${}_6$, where the Curie temperature $T$${}_c$ can be dramatically enhanced beyond room temperature by applying a few percent strain. In addition, the anomalous Hall conductivity in 2D Cr${}_2$Ge${}_2$Se${}_6$ and Cr${}_2$Ge${}_2$Te${}_6$ is predicted to be comparable to that in ferromagnetic metals of Fe and Ni, and is an order of magnitude larger than that in diluted magnetic semiconductor Ga(Mn,As). Based on superexchange interactions, the enhanced $T$${}_c$ in 2D Cr${}_2$Ge${}_2$Se${}_6$ by strain can be understood by the decreased energy difference between 3$d$ orbitals of Cr and 4$p$ orbitals of Se. Our finding highlights the microscopic mechanism to obtain the room temperature ferromagnetic semiconductors by strain.

5 pages, 5 figures

References in corpus (2)

• First Principles Calculation of Anomalous Hall Conductivity in Ferromagnetic bcc Fe
• Probing Magnetism in Insulating Cr2Ge2Te6 by Induced Anomalous Hall Effect in Pt

Cited by in corpus (3)

• Room-temperature colossal magnetoresistance in terraced single-layer graphene
• Enhanced ferromagnetism in cylindrically confined MnAs nanocrystals embedded in wurtzite GaAs nanowire shells
• The atlas of ferroicity in two dimensional MGeX3 family: room-temperature ferromagnetic half metals and unexpected ferroelectricity and ferroelasticity