Room temperature ferromagnetic semiconductors through metal-semiconductor transition in monolayer MnSe2

Abstract

To realize room temperature ferromagnetic semiconductors is still a challenge in spintronics. Recent experiments have obtained two-dimensional (2D) room temperature ferromagnetic metals, such as monolayer MnSe2. In this paper, we proposed a way to obtain room temperature ferromagnetic semiconductors through metal-semiconductor transition. By the density functional theory calculations, a room temperature ferromagnetic semiconductor is obtained in monolayer MnSe2 with a few percent tensile strains, where a metal-semiconductor transition occurs with 2.2% tensile stain. The tensile stains raise the energy of d orbitals of Mn atoms and p orbitals of Se atoms near the Fermi level, making the Fermi level sets in the energy gap of bonding and antibonding states of these p and d orbitals, and opening a small band gap. The room temperature ferromagnetic semiconductors are also obtained in the heterostructures MnSe2/X (X = Al2Se3, GaSe, SiH, and GaP), where metal-semiconductor transition happens due to the tensile strains by interface of heterostructures. In addition, a large magneto-optical Kerr effect (MOKE) is obtained in monolayer MnSe2 with tensile strain and MnSe2-based heterostructures. Our theoretical results pave a way to obtain room temperature magnetic semiconductors from experimentally obtained 2D room temperature ferromagnetic metals through metal-semiconductor transitions.

References in corpus (8)

• Atomic-scale control of graphene magnetism using hydrogen atoms
• Direct photoluminescence probing of ferromagnetism in monolayer two-dimensional CrBr3
• Atomically Thin CrCl3: An in-Plane Layered Antiferromagnetic Insulator
• Gap opening in graphene by shear strain
• Strain-tunable magnetic and electronic properties of monolayer CrI3
• Strain-tunable van der Waals interactions in few-layer black phosphorus
• Strain-Induced Room-Temperature Ferromagnetic Semiconductors with Large Anomalous Hall Conductivity in Two-Dimensional Cr2Ge2Se6
• Chemical Migration and Dipole Formation at van der Waals Interfaces between Magnetic Transition Metal Chalcogenides and Topological Insulators

Cited by in corpus (2)

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• Unveiling Photoluminescence Signatures of Magneto-Optical Coupling in Layered Hybrid Manganese Chloride Perovskites