paper

Impurity Band Conduction in a High Temperature Ferromagnetic Semiconductor

arXiv:cond-mat/0603851 · doi:10.1103/PhysRevLett.97.087208

Abstract

The band structure of a prototypical dilute ferromagnetic semiconductor, GaMnAs, is studied across the phase diagram via optical spectroscopy. We prove that the Fermi energy () resides in a Mn induced impurity band (IB). This conclusion is based upon careful analysis of the frequency and temperature dependence of the optical conductivity (). From our analysis of we infer a large effective mass () of the carriers, supporting the view that conduction occurs in an IB. Our results also provide useful insights into the transport properties of Mn-doped GaAs.

4 pages, 4 figures

References in corpus (3)

Cited by in corpus (16)

Impurity Band Conduction in a High Temperature Ferromagnetic Semiconductor · wovepaper