Magnetic spin excitations in Mn doped GaAs : A model study

Abstract

We provide a quantitative theoretical model study of the dynamical magnetic properties of optimally annealed Ga${}_{1-x}$Mn${}_x$As. This model has already been shown to reproduce accurately the Curie temperatures for Ga${}_{1-x}$Mn${}_x$As. Here we show that the calculated spin stiffness are in excellent agreement with those which were obtained from ab-initio based studies. In addition, an overall good agreement is also found with available experimental data. We have also evaluated the magnon density of states and the typical density of states from which the "mobility edge", separating the extended from localized magnon states, was determined. The power of the model lies in its ability to be generalized for a broad class of diluted magnetic semiconductor materials, thus it bridges the gap between first principle calculations and model based studies.

5 pages, 5 figures, Text and some figures revised to match the accepted version

References in corpus (7)

• Theory of ferromagnetic (III,Mn)V semiconductors
• Spatial structure of an individual Mn acceptor in GaAs
• Impurity Band Conduction in a High Temperature Ferromagnetic Semiconductor
• Magnetic spin excitations in diluted ferromagnetic systems: the case of $G{a}_{1-x}M{n}_{x}As$
• Unified picture for diluted magnetic semiconductors
• Dynamical properties of a three-dimensional diluted Heisenberg model
• Optical conductivity of Mn doped GaAs

Cited by in corpus (4)

• Carrier induced ferromagnetism in the insulating Mn doped III-V semiconductor InP
• Spontaneous magnetization in presence of nanoscale inhomogeneities in diluted magnetic systems
• Effective Heisenberg exchange integrals of diluted magnetic semiconductors determined within realistic multi-band tight-binding models
• Spin-wave excitations in presence of nanoclusters of magnetic impurities