Carrier induced ferromagnetism in the insulating Mn doped III-V semiconductor InP

Abstract

Although InP and GaAs have very similar band-structure their magnetic properties appear to drastically differ. Critical temperatures in (In,Mn)P are much smaller than that of (Ga,Mn)As and scale linearly with Mn concentration. This is in contrast to the square root behaviour found in (Ga,Mn)As. Moreover the magnetization curve exhibits an unconventional shape in (In,Mn)P contrasting with the conventional one of well annealed (Ga,Mn)As. By combining several theoretical approaches, the nature of ferromagnetism in Mn doped InP is investigated. It appears that the magnetic properties are essentially controlled by the position of the Mn acceptor level. Our calculations are in excellent agreement with recent measurements for both critical temperatures and magnetizations. The results are only consistent with a Fermi level lying in an impurity band, ruling out the possibility to understand the physical properties of Mn doped InP within the valence band scenario. The quantitative success found here reveals a predictive tool of choice that should open interesting pathways to address magnetic properties in other compounds

arXiv comment5 pages and 5 figures, accepted for publication in Phys. Rev. B

References in corpus (19)

• Theory of ferromagnetic (III,Mn)V semiconductors
• The Kernel Polynomial Method
• Ferromagnetic Semiconductors: Moving Beyond (Ga,Mn)As
• Prospects of high temperature ferromagnetism in (Ga,Mn)As semiconductors
• High Curie temperature GaMnAs obtained by resistance-monitored annealing
• High-precision finite-size scaling analysis of the quantum-critical point of S=1/2 Heisenberg antiferromagnetic bilayers
• Disorder effects in diluted magnetic semiconductors
• Calculating the Curie Temperature reliably in diluted III-V ferromagnetic semiconductors
• Compensation, interstitial defects and ferromagnetism in diluted semiconductors
• RKKY Interaction in Disordered Graphene
• Metal-insulator transition by isovalent anion substitution in Ga1-xMnxAs: Implications to ferromagnetism
• Non-perturbative $J_{pd}$ model and ferromagnetism in dilute magnets
• Unified picture for diluted magnetic semiconductors
• Ferromagnetism and impurity band in a new magnetic semiconductor: InMnP
• Critical behavior of diluted magnetic semiconductors: the apparent violation and the eventual restoration of the Harris criterion for all regimes of disorder
• Magnetic spin excitations in Mn doped GaAs : A model study
• A comprehensive study of the magnetic, structural and transport properties of the III-V ferromagnetic semiconductor InMnP
• Comment on the PRL "Large-Scale Monte Carlo Study of a Realistic Lattice Model for Ga_(1-x)Mn_xAs"
• On the reliability of recent Monte Carlo studies of dilute systems of localized spins interacting with itinerant carriers

Cited by in corpus (5)

• Flat band induced room temperature ferromagnetism in two dimensional systems
• Universal quantum transport and impurity band super metallicity in self-similar graphene carpets
• Giant boost of the quantum metric in disordered one dimensional flat band systems
• Quantum transport in flat bands and super-metallicity
• Robustness of flat band superconductivity against disorder in a two-dimensional Lieb lattice model