Calculating the Curie Temperature reliably in diluted III-V ferromagnetic semiconductors

Abstract

We present a semi-analytic theory for the Curie temperature in diluted magnetic semi-conductors that treats disorder effects exactly in the effective Heisenberg Hamiltonian, and spin fluctuations within a local RPA. The exchange couplings are taken from concentration dependent {\it ab initio} estimates. The theory gives very good agreement with published data for well-annealed samples of Mn${}_x$Ga${}_{1-x}$As. We predict the critical temperatures for Mn${}_x$Ga${}_{1-x}$N lower than in doped GaAs, despite the stronger nearest-neighbour ferromagnetic coupling. We also predict the dependence on the hole concentration.

4 figures included

References in corpus (8)

• Mn Interstitial Diffusion in (Ga,Mn)As
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