Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism

Abstract

For the prototype diluted ferromagnetic semiconductor (Ga,Mn)As, there is a fundamental concern about the electronic states near the Fermi level, i.e., whether the Fermi level resides in a well-separated impurity band derived from Mn doping (impurity-band model) or in the valence band that is already merged with the Mn-derived impurity band (valence-band model). We investigate this question by carefully shifting the Fermi level by means of carrier compensation. We use helium-ion implantation, a standard industry technology, to precisely compensate the hole doping of GaAs-based diluted ferromagnetic semiconductors while keeping the Mn concentration constant. We monitor the change of Curie temperature ($T_C$) and conductivity. For a broad range of samples including (Ga,Mn)As and (Ga,Mn)(As,P) with various Mn and P concentrations, we observe a smooth decrease of $T_C$ with carrier compensation over a wide temperature range while the conduction is changed from metallic to insulating. The existence of $T_C$ below 10\,K is also confirmed in heavily compensated samples. Our experimental results are naturally explained within the valence-band picture.

arXiv comment14 pages, 10 figures

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Cited by in corpus (6)

• Robustness of ferromagnetism in (In,Fe)Sb diluted magnetic semiconductor to variation of charge carrier concentration and Fermi level position
• The nature of transport and ferromagnetic properties of the GaAs structures with the Mn δ-doped layer
• Phase diagram of a ferromagnetic semiconductor. The origin of superparamagnetism
• Investigation of a possible electronic phase separation in the magnetic semiconductors Ga${}_{1-x}$Mn${}_x$As and Ga${}_{1-x}$Mn${}_x$P by means of fluctuation spectroscopy
• p-type codoping effect in (Ga,Mn)As: Mn lattice location versus magnetic properties
• Hole compensation effect in III-Mn-V dilute ferromagnetic semiconductors