activity
20122021
most citedCarbon p Electron Ferromagnetism in Silicon Carbide

42 citations · 228 across the 13 of their papers we have counts for

collaborators

12 papers

cond-mat.mes-hall2021

Antiferromagnetic Resonance Revisited: Dissipative Coupling without Dissipation

Yutian Wang, Jiang Xiao

The antiferromagnet is a closed Hermitian system, we find that its excitations, even in the absence of dissipation, can be viewed as a non-Hermitian system with dissipative couplin…

cond-mat.mtrl-sci2017★ 1 cited

Monovacancy paramagnetism in neutron-irradiated graphite probed by C NMR

Z. T. Zhang, C. Xu, D. Dmytriieva +6

We report on the magnetic properties of monovacancy defects in neutron-irradiated graphite, probed by C nuclear magnetic resonance spectroscopy. The bulk paramagnetism of th…

cond-mat.mtrl-sci2017★ 14 cited

Interaction between magnetic moments and itinerant carriers in d0 ferromagnetic SiC

Yu Liu, Ye Yuan, Fang Liu +12

Elucidating the interaction between magnetic moments and itinerant carriers is an important step to spintronic applications. Here, we investigate magnetic and transport properties…

cond-mat.mtrl-sci2016★ 12 cited

Defect-induced magnetism in SiC probed by nuclear magnetic resonance

Z. T. Zhang, D. Dmytriieva, S. Molatta +5

We give evidence for intrinsic, defect-induced bulk paramagnetism in SiC by means of C and Si nuclear magnetic resonance (NMR) spectroscopy. The temperature dependenc…

cond-mat.mtrl-sci2016★ 25 cited

Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism

Shengqiang Zhou, Lin Li, Ye Yuan +11

For the prototype diluted ferromagnetic semiconductor (Ga,Mn)As, there is a fundamental concern about the electronic states near the Fermi level, i.e., whether the Fermi level resi…

cond-mat.mtrl-sci2015★ 42 cited

Carbon p Electron Ferromagnetism in Silicon Carbide

Y. Wang, Y. Liu, G. Wang +11

Ferromagnetism can occur in wide-band gap semiconductors as well as in carbon-based materials when specific defects are introduced. It is thus desirable to establish a direct relat…