Carbon p Electron Ferromagnetism in Silicon Carbide

Abstract

Ferromagnetism can occur in wide-band gap semiconductors as well as in carbon-based materials when specific defects are introduced. It is thus desirable to establish a direct relation between the defects and the resulting ferromagnetism. Here, we contribute to revealing the origin of defect-induced ferromagnetism using SiC as a prototypical example. We show that the long-range ferromagnetic coupling can be attributed to the p electrons of the nearest-neighbor carbon atoms around the VSiVC divacancies. Thus, the ferromagnetism is traced down to its microscopic, electronic origin.

arXiv comment27 pages, 9 figures, Scientific Reports, in press (2015)

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• Toward a systematic discovery of artificial functional magnetic materials
• Ultraviolet Spectropolarimetry with Polstar: Interstellar Medium Science
• Towards diluted magnetism in TaAs
• Charge-transfer-driven enhanced room-temperature ferromagnetism in BiFeO${}_3$/Ag nanocomposite