Rise and fall of defect induced ferromagnetism in SiC single crystals

Abstract

6H-SiC (silicon carbide) single crystals containing VSi-VC divacancies are investigated with respect to magnetic and structural properties. We found that an initial increase of structural disorder leads to pronounced ferromagnetic properties at room temperature. Further introduction of disorder lowers the saturation magnetization and is accompanied with the onset of lattice amorphization. Close to the threshold of full amorphization, also divacancy clusters are formed and the saturation magnetization nearly drops to zero.

arXiv comment12 pages, 1 figure

References in corpus (3)

• $\pi$-Electron Ferromagnetism in Metal Free Carbon Probed by Soft X-Ray Dichroism
• Origin of magnetic moments in defective TiO2 single crystals
• Ion-beam modification of the magnetic properties of GaMnAs epilayers

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• Toward a systematic discovery of artificial functional magnetic materials
• Towards diluted magnetism in TaAs
• Anisotropic defect-induced ferromagnetism and transport in Gd-doped GaN two-dimensional electron gasses