Interaction between magnetic moments and itinerant carriers in d0 ferromagnetic SiC
arXiv:1705.07793 · doi:10.1103/PhysRevB.95.195309
Abstract
Elucidating the interaction between magnetic moments and itinerant carriers is an important step to spintronic applications. Here, we investigate magnetic and transport properties in d0 ferromagnetic SiC single crystals prepared by postimplantation pulsed laser annealing. Magnetic moments are contributed by the p states of carbon atoms, but their magnetic circular dichroism is different from that in semi-insulating SiC samples. The anomalous Hall effect and negative magnetoresistance indicate the influence of d0 spin order on free carriers. The ferromagnetism is relatively weak in N-implanted SiC compared with that in Al-implanted SiC after annealing. The results suggest that d0 magnetic moments and itinerant carriers can interact with each other, which will facilitate the development of SiC spintronic devices with d0 ferromagnetism.
arXiv comment20 pages, 5 figures
References in corpus (19)
- Magnetic effects at the interface between nonmagnetic oxides
- Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors
- Dilute ferromagnetic semiconductors: Physics and spintronic structures
- The missing atom as a source of carbon magnetism
- Induced Magnetic Ordering by Proton Irradiation in Graphite
- Room-temperature ferromagnetism in graphite driven by 2D networks of point defects
- -Electron Ferromagnetism in Metal Free Carbon Probed by Soft X-Ray Dichroism
- Dual origin of defect magnetism in graphene and its reversible switching by molecular doping
- Magnetism in MoS2 induced by MeV proton irradiation
- Origin of magnetic moments in defective TiO2 single crystals
- Experimental Investigation of Temperature-Dependent Gilbert Damping in Permalloy Thin Films
- Electrolyte gate-controlled Kondo effect in SrTiO3
- Direct experimental evidence of pi magnetism of a single atomic vacancy in graphene
- Phase diagram of electrostatically doped Strontium Titanate (SrTiO3)
- The role of hydrogen in room-temperature ferromagnetism at graphite surfaces
- Defect-Induced Magnetism in Solids
- Rise and fall of defect induced ferromagnetism in SiC single crystals
- Carbon p Electron Ferromagnetism in Silicon Carbide
- Defect-induced magnetism in SiC: Interplay between ferromagnetism and paramagnetism