181 citations · 1.1k across the 26 of their papers we have counts for
27 papers
Formation of silicon nanocrystals in silicon carbide using flash lamp annealing
C. Weiss, M. Schnabel, S. Prucnal +5
During the formation of Si nanocrystals (Si NC) in SiC layers via solid-phase crystallization, the unintended formation of nanocrystalline SiC reduces the minority carr…
Superconductivity in single-crystalline, aluminum- and gallium-hyperdoped germanium
Slawomir Prucnal, Viton Heera, René Hübner +11
Superconductivity in group IV semiconductors is desired for hybrid devices combining both semiconducting and superconducting properties. Following boron doped diamond and Si, super…
Strain and Band-Gap Engineering in Ge-Sn Alloys via P Doping
Slawomir Prucnal, Yonder Berencén, Mao Wang +19
Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type doping. In this work, we use all three approaches together to fabricate…
CMOS-compatible controlled hyperdoping of silicon nanowires
Yonder Berencén, Slawomir Prucnal, Wolfhard Möller +13
Hyperdoping consists of the intentional introduction of deep-level dopants into a semiconductor in excess of equilibrium concentrations. This causes a broadening of dopant energy l…
Interaction between magnetic moments and itinerant carriers in d0 ferromagnetic SiC
Yu Liu, Ye Yuan, Fang Liu +12
Elucidating the interaction between magnetic moments and itinerant carriers is an important step to spintronic applications. Here, we investigate magnetic and transport properties…
Suppressing the cellular breakdown in silicon supersaturated with titanium
Fang Liu, S Prucnal, R Hübner +4
Hyper doping Si with up to 6 at.% Ti in solid solution was performed by ion implantation followed by pulsed laser annealing and flash lamp annealing. In both cases, the implanted S…